故障电压诱发的功率模块温升规律  

Temperature Rise Law of Power Modules Induced by Fault Voltage

作　　者：刘玮琳 霍思佳 乐应波 杨程 崔昊杨 Liu Weilin;Huo Sijia;Yue Yingbo;Yang Cheng;Cui Haoyang(School of Electronics and Information Engineering,Shanghai University of Electric Power,Shanghai 201306,China;Xi'an Power Supply Company of State Grid Shaanxi Electric Power Co.,Ltd.,Xi'an 710048,China)

机构地区：[1]上海电力大学电子与信息工程学院,上海201306 [2]国网陕西省电力有限公司西安供电公司,西安710048

出　　处：《半导体技术》2025年第4期407-416,共10页Semiconductor Technology

基　　金：上海市自然科学基金资助项目(23ZR424400)。

摘　　要：故障电压引发的功率畸变诱发绝缘栅双极晶体管(IGBT)结温瞬变,但此过程的普遍规律、关联机制尚未明确,限制了故障电压穿越期变流器中IGBT热管理策略的针对性与有效性。通过模拟多种电压故障场景,探究了故障电压诱发的机网两侧变流器功率模块温升规律,梳理了故障电压条件下IGBT结温演化过程,明确了故障电压与IGBT结温的关联机制。研究结果表明,结温峰值与电压跌落程度呈显著正相关,电压骤降引发转子电流剧增,导致功率损耗迅速累积,且结温对电压及电流的变化具有动态敏感性。电压故障时,机侧与网侧IGBT结温响应差异明显,机侧因直接承担励磁控制及高电流负荷,结温大幅上升,而网侧变化相对平缓。深化了对IGBT瞬态热行为机理的理解,为优化热管理策略提供参考。Power distortion caused by fault voltage induces transient junction temperature in insulated gate bipolar transistors(IGBTs),but the universal law and correlation mechanism of this process have not yet been clarified,which limits the pertinence and effectiveness of thermal management strategies for IGBTs in converters during the fault voltage ride-through period.By simulating various voltage fault scenarios,the temperature rise laws of the power modules in the converters on both the generator and grid sides induced by fault voltage were explored,the evolution process of IGBT junction temperature under fault voltage conditions was sorted out,and the correlation mechanism between fault voltage and IGBT junction temperature was clarified.The research results show that the peak junction temperature is significantly positively correlated with the degree of voltage drop.Sudden voltage drop triggers a sag,causing sharp increase in rotor current and leading to rapid accumulation of power loss.Moreover,the junction temperature has dynamic sensitivity to changes in voltage and current.During the voltage faults,the response of IGBT junction temperature on both the generator and grid sides was significantly different.The generator side,due to directly bearing excitation control and high current load,experiences a significant increase in junction temperature,while the grid side changes relatively gently.This deepens the understanding of the transient thermal behavior mechanism of IGBTs and provide a reference for optimizing thermal management strategies.

关 键 词：故障电压穿越 变流器 绝缘栅双极晶体管(IGBT) 功率畸变 结温 

分 类 号：TN431[电子电信—微电子学与固体电子学] TN407