双向高过载硅基差压敏感元件的研制  

Development of bi-directional high overload silicon-based differential pressure sensitive element

作　　者：杜立群[1,2] 李奥奇 李蒙[1,2] 杨晓臣 孟祥悦 邱汇烽 DU Liqun;LI Aoqi;LI Meng;YANG Xiaocheng;MENG Xiangyue;QIU Huifeng(State Key Laboratory of High-performance Precision Manufacturing,Dalian University of Technology,Dalian 116024,China;Key Laboratory for Micro/Nano Technology and System of Liaoning Province,Dalian University of Technology,Dalian 116024,China)

机构地区：[1]大连理工大学高性能精密制造全国重点实验室,辽宁大连116024 [2]大连理工大学辽宁省微纳米技术及系统重点实验室,辽宁大连116024

出　　处：《光学精密工程》2025年第2期209-219,共11页Optics and Precision Engineering

基　　金：国家重点研发计划资助项目(No.2023YFB3209003)。

摘　　要：为了提高差压传感器的双向过载能力,本文设计了一种梁-群岛错位膜结构差压敏感元件。该敏感元件由梁-群岛硅膜结构和玻璃基底键合而成。其中,梁结构降低了应力集中,群岛结构提高了结构刚度;玻璃基底键合面设计有方形凹槽和圆形通孔,硅膜结构和玻璃基底的方形凹槽形成的错位结构进一步降低了最大应力。首先,通过有限元软件分析了双向高过载硅基差压敏感元件的应力分布、敏感元件的满量程输出及最大应力。其次,分析了结构尺寸与爆破压力的关系,采用尺寸优化求解出最大爆破压力下的结构尺寸。最后,通过MEMS硅工艺制作了具有双向高过载的硅基差压敏感元件。压力测试结果表明:制得的双向高过载硅基差压敏感元件的爆破压力为8.5倍量程,与传统C型膜结构差压敏感元件(爆破压力6.5倍量程)相比,过载能力提高了30.7%。实验结果证明梁-群岛错位膜结构可以有效提高差压敏感元件的双向过载能力。In order to improve the bi-directional overload capability of differential pressure sensors,a beam-archipelago dislocated membrane structure differential pressure sensitive element was designed in this paper.The sensitive element consisted of a beam-archipelago silicon membrane structure bonded to a glass substrate.The beam structure reduced the stress concentration,and the archipelago structure improved the structural rigidity;the glass substrate was designed with square grooves and circular through holes on the bonding surface,and the dislocation structure formed by the square grooves of the silicon membrane structure and the glass substrate further reduced the maximum stress.Firstly,the stress distribution,full-scale output,and maximum stress of the bi-directional high overload silicon-based differential pressure sensitive element were analyzed using finite element software.Secondly,the relationship between structural dimensions and burst pressure was analyzed,and the structural dimensions at maximum burst pressure were solved through dimensional optimization.Finally,a silicon-based differential pressure sensitive element with bi-directional high overload was fabricated using the MEMS silicon process.The pressure test results show that the fabricated bi-directional high overload silicon-based differential pressure sensitive element has a burst pressure of 8.5 times scale,which is 30.7%higher overload capacity compared with the traditional C-type membrane structure differential pressure sensitive element(burst pressure 6.5 times scale).The experimental results demonstrate that the beam-archipelago dislocation membrane structure can effectively improve the bi-directonal overload capacity of the differential pressure sensitive element.

关 键 词：MEMS 差压敏感元件 有限元 尺寸优化 过载能力 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]