基于Fluent仿真的原子层沉积法制备镀膜毛细管研究  

Preparation of Coated-monocapillary by Atomic Layer Deposition Method Based on Fluent Simulation

作　　者：赵慧斌[1] 李艳丽[1] 吕文思 孔祥东[1] 韩立[1] 张贺[1] ZHAO Huibin;LI Yanli;LV Wensi;KONG Xiangdong;HAN Li;ZHANG He(Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China)

机构地区：[1]中国科学院电工研究所,北京100190

出　　处：《光子学报》2025年第3期242-252,共11页Acta Photonica Sinica

基　　金：国家重点研发计划(No.2019YFB1503502);国家自然科学基金(No.12104454);中国科学院电工研究所基金(No.E1554404)。

摘　　要：采用Fluent仿真工具对三种模型下气体在毛细管内的流通过程进行模拟,通过稳态和瞬态仿真,系统研究了不同模型下,气体在腔室和毛细管内的扩散过程。仿真结果显示,当毛细管与一个出气口连接,其余出气口全部打开时,流经毛细管的气体充足,在吹扫过程结束时,腔室内无多余气体残留。在此基础上,根据三种模型,利用原子层沉积技术在单毛细管内表面制备了HfO_(2)薄膜,测试结果与仿真分析结果一致。采用优化的镀膜模型实现在毛细管内表面生长厚度均匀、表面光滑的薄膜。Atomic Layer Deposition(ALD)is a gas-phase deposition technique based on surface self-limiting chemical reaction.Thin film is deposited on the substrate by streaming precursor and purge gas into the chamber alternatively.Compared with other film growth method such as chemical vapor deposition or physical vapor deposition,due to the self-limiting growth characteristic of ALD,it can realize the deposition of thin film on curved substrate with good conformality and uniformity without additional operations including rotating the substrate.ALD is expected to enable the growth of high-quality film on curved substrate.For example,glass X-ray monocapillary is an important X-ray optics and is a hollow tubular structure with the advantages of drawing into required shape easily and small roughness of inner surface.X-ray focusing beam can be obtained by the total reflection of incident X-rays on the inner surface of monocapillary.It,has been widely used in synchrotron radiation large-scale scientific system and X-ray analytical instruments.According to its working principle,the preparation of a uniform,smooth film with density higher than that of glass on the inner surface of monocapillary can further expand the application of the monocapillary in the field of high-energy X-rays.Although ALD has the potential to grow uniform film on the inner surface of monocapillary,the ALD process has to be optimized specially to achieve uniform film growth due to the large aspect ratio of monocapillary.It can be known that the key to preparing high-quality film on the inner surface of monocapillary is to ensure that the chemisorption of precursor is saturated on the entire inner surface and that the excess precursor or by-product is purged away by analyzing the process of growing thin film by ALD.Therefore,prolonging the precursor streaming time and purge time are commonly used.However,due to the fact that only a small portion of the precursor gas is used for film growth and a large portion of the precursor is discharged from the chamber

关 键 词：Fluent仿真 原子层沉积 毛细管 内表面镀膜 气体扩散 

分 类 号：O434.1[机械工程—光学工程]