氧掺杂石墨相氮化碳改性钙钛矿薄膜的制备和性能  

Preparation and properties of oxygen-doped graphitic phase carbon nitride-modified perovskite film

作　　者：李志义[1] 侯寅 魏炜[1] 刘凤霞[1] 许晓飞[1] 刘志军[1] LI Zhiyi;HOU Yin;WEI Wei;LIU Fengxia;XU Xiaofei;LIU Zhijun(Research&Design Institute of Fluid and Powder Engineering,Dalian University of Technology,Dalian 116024,Liaoning,China)

机构地区：[1]大连理工大学流体与粉体工程研究设计所,辽宁大连116024

出　　处：《精细化工》2025年第4期811-817,827,共8页Fine Chemicals

摘　　要：将氧掺杂石墨相氮化碳(g-C_(3)N_(4)-O)作为界面修饰层对甲基碘化铵(MAPbI_(3))进行改性,制备了g-C_(3)N_(4)-O改性甲胺碘基钙钛矿薄膜(g-C_(3)N_(4)-O/MAPbI_(3))。通过XPS、SEM、XRD、UV-Vis吸收光谱和稳态光致发光光谱(PL)对g-C_(3)N_(4)-O/MAPbI_(3)进行了表征。结果表明,g-C_(3)N_(4)-O/MAPbI_(3)高光电性能(110)晶面优先取向,与MAPbI_(3)相比,其结晶度从75.11°提高至78.62°,半峰宽减少了37.73%;g-C_(3)N_(4)-O/MAPbI_(3)表面更加平整、均匀致密、无针孔;g-C_(3)N_(4)-O/MAPbI_(3)的界面荧光寿命较MAPbI_(3)减少了32.52%,电荷传输和提取能力显著增加。g-C_(3)N_(4)-O中的N原子与钙钛矿薄膜中未配位的Pb离子成键,有效钝化了钙钛矿薄膜界面处深能级缺陷,改善了钙钛矿薄膜界面处电荷的传输和提取。Oxygen-doped graphite-phase carbon nitride(g-C_(3)N_(4)-O)modified methylaminoiodide perovskite film(g-C_(3)N_(4)-O/MAPbI_(3))was prepared using g-C_(3)N_(4)-O as an interfacial modification layer to modify ammonium methyl iodide(MAPbI_(3)),and characterized by XPS,SEM,XRD,UV-Vis absorption spectrum and steady-state photoluminescence spectrum(PL).The results showed that the modification of g-C_(3)N_(4)-O resulted in preferential orientation of the(110)facets of g-C_(3)N_(4)-O/MAPbI_(3).Compared with those of MAPbI_(3),the crystallinity increased from 75.11°to 78.62°,and the half-peak width decreased by 37.73%.The surface of g-C_(3)N_(4)-O/MAPbI_(3) was flatter,more uniformly dense,and free of pinholes.The interfacial fluorescence lifetime of g-C_(3)N_(4)-O/MAPbI_(3)was reduced by 32.52%compared with that of MAPbI_(3),and the charge transport and extraction capacity significantly increased.The N atoms in g-C_(3)N_(4)-O bonded with the under-coordinated Pb ions in the perovskite film,which passivated the deep energy level defects at the interface and improved charge transport and extraction.

关 键 词：钙钛矿薄膜 掺杂 石墨相氮化碳 晶面取向 钝化缺陷 电子传输 功能材料 

分 类 号：TM914[电气工程—电力电子与电力传动] TB34[一般工业技术—材料科学与工程]