微沟槽氮化镓α粒子辐射探测器制备及性能分析  

Analysis of Preparation and Performance of Microchannel Gallium Nitride Alpha Particle Radiation Detector

作　　者：许啟凤 邹继军[1] 伍义远 赖兴阳 蔡博文 XU Qifeng;ZOU Jijun;WU Yiyuan;LAI Xingyang;CAI Bowen(East China University of Technology,Jiangxi 330013,China.)

机构地区：[1]东华理工大学,江西330013

出　　处：《电子技术(上海)》2025年第1期14-15,共2页Electronic Technology

基　　金：国家自然科学基金(12275049);江西省国际科技合作重点项目(20232BBH80005)。

摘　　要：阐述采用350μm厚的高阻氮化镓(GaN)晶体,通过清洗、光刻、刻蚀、镀膜等工艺步骤,制备了沟槽型肖特基二极管,用于α粒子辐射探测。探讨了探测器的性能,结果表明,在反向偏压200 V时,探测器的漏电流为0.28 nA;在偏置电压-650 V时,α粒子的能量分辨率为15.2%。This paper describes the fabrication of a trench type Schottky diode using a 350μm thick high resistance gallium nitride(GaN)crystal through processes such as cleaning,photolithography,etching,and coating,for alpha particle radiation detection.It explores the performance of the detector,with a leakage current of 0.28 nA at a reverse bias of 200 V and an energy resolution of 15.2%for alpha particles at a bias voltage of-650 V.

关 键 词：高阻氮化镓 α粒子辐射探测 肖特基二极管 

分 类 号：TN405[电子电信—微电子学与固体电子学]