高压MOS器件SPICE建模研究  

Research on SPICE Modeling of High-Voltage MOS Devices

作　　者：顾祥[1,2] 彭宏伟 纪旭明 李金航 GU Xiang;PENG Hongwei;JI Xuming;LI Jinhang(The 58th Research Institute,China Electronics Technology Group Corp,Wuxi Jiangsu 214035,China;National Key Laboratory of Integrated Circuits and Microsystems,Wuxi Jiangsu 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035 [2]集成电路与微系统全国重点实验室,江苏无锡214035

出　　处：《微处理机》2025年第2期9-13,共5页Microprocessors

摘　　要：针对BSIM3v3模型在高压集成电路中高压MOS器件建模上的局限性,通过深入分析栅源电压和衬源电压对源漏电阻的影响,以及电流准饱和效应、碰撞电离电流、高压寄生管和自热效应等关键因素,提出一种基于BSIM3v3的高压MOS模型改进方法。该方法通过引入不同的压控电阻(VCR)、受控电压源(VCVS)和受控电流源(CCCS)等子电路,构建了一个用于精确模拟高压MOS器件的SPICE Macro模型。这一改进显著提升了高压MOS器件的建模精度,对高压集成电路的设计与仿真具有重要的实际意义和应用价值。In light of the shortcomings of the BSIM3v3 model in modeling high-voltage MOS devices for high-voltage integrated circuits,this study proposes an improved method based on BSIM3v3 by analy-zing the effects of gate-source voltage and substrate-source voltage on source-drain resistance,as well as phenomena such as current quasi-saturation,impact ionization current,high-voltage parasitic transistors,and self-heating effects.By incorporating additional sub-circuits such as voltage-controlled resistors(VCR),voltage-controlled voltage sources(VCVS),and current-controlled current sources(CCCS),a SPICE macro model for accurately simulating high-voltage MOS devices is established.This approach significantly enhances the modeling accuracy of high-voltage MOS devices,providing important implications for the design and simulation of high-voltage integrated circuits.

关 键 词：高压MOS SPICE模型 参数提取 

分 类 号：TN386[电子电信—物理电子学]