High carrier collection efficiency in graphene/GaAs heterojunction photodetectors  

作　　者：Baorui Fang Ye Tian Zongmin Ma 

机构地区：[1]School of Mechanical Engineering,Dalian university,Dalian 116600,China [2]Key Laboratory of Multifunctional Nanomaterials and Smart Systems,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China.

出　　处：《Journal of Semiconductors》2025年第4期81-87,共7页半导体学报(英文版)

基　　金：supported by the National Natural Science Foundation of China(62375279);Suzhou Industrial Science and Technology Program(SYG202340,SJC2023004);Distinguished Young Scholar Fund of Natural Science Foundation of Jiangsu Province(BK20240125).

摘　　要：In the rapidly evolving field of modern technology,near-infrared(NIR)photodetectors are extremely crucial for efficient and reliable optical communications.The graphene/GaAs Schottky junction photodetector leverages graphene’s exceptional carrier mobility and broadband absorption,coupled with GaAs’s strong absorption in the NIR spectrum,to achieve high responsivity and rapid response times.Here,we present a NIR photodetector employing a graphene/GaAs Schottky junction tailored for communication wavelengths.We fabricated high-performance graphene/GaAs Schottky junction devices with interdigitated electrodes of varying finger widths,systematically investigating their impact on device performance.The experimental results demonstrate that incorporating interdigitated electrodes significantly enhances the collection efficiency of photogenerated carriers in graphene/GaAs photodetectors.When illuminated by 808 nm NIR light at an intensity of 7.23 mW/cm^(2),the device achieves an impressive switch ratio of 10^(7),along with a high responsivity of 40.1 mA/W and a remarkable detectivity of 2.89×10^(13)Jones.Additionally,the device is characterized by rapid response times,with rise and fall times of 18.5 and 17.5μs,respectively,at a 3 dB bandwidth.These findings underscore the significant potential of high-performance graphene/GaAs photodetectors for applications in NIR optoelectronic systems.

关 键 词：GRAPHENE GAAS Schottky junction interdigitated electrode 

分 类 号：TN215[电子电信—物理电子学] TN36