Features of persistent photoconductivity in CdHgTe-based single quantum well heterostructures  

作　　者：Mikhail K.Sotnichuk Anton V.Ikonnikov Dmitry R.Khokhlov Nikolay N.Mikhailov Sergey A.Dvoretsky Vladimir I.Gavrilenko 

机构地区：[1]Faculty of Physics,Lomonosov Moscow State University,Moscow 119991,Russia [2]Rzhanov Institute of Semiconductor Physics,Siberian Branch of Russian Academy of Sciences,Novosibirsk 630090,Russia [3]Institute for Physics of Microstructures,Russian Academy of Sciences,Nizhny Novgorod 603950,Russia

出　　处：《Journal of Semiconductors》2025年第4期89-98,共10页半导体学报(英文版)

基　　金：supported by the Russian Science Foundation (Grant No. 22-12-00298);supported by the Center of Excellence "Center of Photonics" funded by the Ministry of Science and Higher Education of the Russian Federation, Contract #075-15-2022-316;the Theoretical Physics and Mathematics Advancement Foundation "BASIS" scholarship for the support.

摘　　要：In this work,we studied the persistent photoconductivity(PPC)spectra in single HgTe/CdHgTe quantum wells with different growth parameters and different types of dark conductivity.The studies were performed in a wide radiation quantum energy range of 0.62–3.1 eV both at T=4.2 K and at T=77 K.Common features of the PPC spectra for all structures were revealed,and their relation to the presence of a CdTe cap layer in all structures and the appropriate cadmium fraction in the CdHgTe barrier layers was shown.One of the features was associated with the presence of a deep level in the CdTe layer.In addition,the oscillatory behavior of the PPC spectra in the region from 0.8–1.1 eV to 1.2–1.5 eV was observed.It is associated with the cascade emission of longitudinal optical phonons in CdHgTe barrier.

关 键 词：quantum well CdHgTe persistent photoconductivity HETEROSTRUCTURE SPECTROSCOPY 

分 类 号：O471.1[理学—半导体物理]