制备皱纹状介孔C-mSiO_(2)/CeO_(2)复合磨料及其SiO_(2)CMP的应用  

Preparation and application of wrinkled mesoporous C-mSiO_(2)/CeO_(2)composite abrasives for SiO_(2)CMP

作　　者：王东伟 王胜利 杨云点 罗翀 栾晓东 邵祥清 李瑾 WANG Dongwei;WANG Shengli;YANG Yundian;LUO Chong;LUAN Xiaodong;SHAO Xiangqing;LI Jin(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Semiconductor Technology Innovation Center(Beijing)Corporation,Beijing 100176,China;Innovation and Research Institute,Hebei University of Technology,Shijiazhuang 050299,China;School of Electrical and Electronic Engineering,Jiangsu Ocean University,Lianyungang 222000,Jiangsu Province,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]北方集成电路技术创新中心(北京)有限公司,北京100176 [3]河北工业大学创新研究院,河北石家庄050299 [4]江苏海洋大学电子工程学院,江苏连云港222000

出　　处：《电子元件与材料》2025年第2期231-236,共6页Electronic Components And Materials

基　　金：河北工业大学创新研究院(石家庄)石家庄市科技合作专项基金资助(SJZZXB23003);国家自然科学基金(62074049);中国博士后基金(2024M751207)。

摘　　要：为了提高集成电路层间介质化学机械抛光(CMP)的去除速率并改善表面质量,先采用微乳液法制备皱纹状介孔SiO_(2),之后用化学沉积法包覆CeO_(2),成功制得皱纹状C-mSiO_(2)/CeO_(2)芯/壳复合磨料,并以此配置抛光液,对SiO_(2)层间介质进行CMP实验。采用扫描电子显微镜(SEM)、透射电子显微镜(TEM)对C-mSiO_(2)/CeO_(2)芯/壳复合磨料的结构、形貌进行表征,证明其具有完整包覆的壳核结构。利用粒径分析仪测量其平均粒径为241.4nm,Zeta电位为-29.93mV。CMP实验表明,采用质量分数1%、粒径约200nm的C-mSiO_(2)/CeO_(2)复合磨料对氧化硅镀膜片进行抛光,其去除速率达到112.1nm/min,比同样条件下CeO_(2)磨料的CMP速率提高128%。通过AFM表征可知,抛光后的氧化硅镀膜片表面粗糙度约为0.0514nm。因此,相较于传统CeO_(2)磨料,皱纹状C-mSiO_(2)/CeO_(2)芯/壳复合磨料在SiO_(2)层间介质的CMP过程中,表现出优越的CMP效果。To enhance the removal rate of chemical-mechanical polishing(CMP)for silicon dioxide in integrated circuits(IC)and improve its surface quality,wrinkle-like mesoporous SiO_(2)was synthesized via the microemulsion method and employed as an abrasive in the silicon dioxide CMP slurry.The structure and morphology of the C-mSiO_(2)/CeO_(2)core/shell composites were examined by scanning electron microscopy(SEM)and transmission electron microscopy(TEM).It is verified that the C-mSiO_(2)/CeO_(2)core/shell composite exhibits a complete and coated shell structure.The average particle size is 241.4 nm,and the Zeta potential is-29.93 mV.The CMP experiment demonstrates that the polishing rate of the silicon oxide coating with C-mSiO_(2)/CeO_(2)(particle size approximately 200 nm)composite abrasive at the mass fraction of 1%could reach 112.1 nm/min,which is 128%higher than that of CeO_(2)abrasive under identical conditions.The surface roughness of the polished silicon oxide coating,as measured by atomic force microscopy(AFM),is about 0.0514 nm.Consequently,in comparison with traditional CeO_(2)abrasives,the wrinkle-like C-mSiO_(2)/CeO_(2)core/shell composite abrasives manifest superior CMP effect in SiO_(2)interlayer medium CMP.

关 键 词：化学机械抛光(CMP) 皱纹状 介孔SiO_(2) 复合材料 去除速率 

分 类 号：TN305.2[电子电信—物理电子学]