High-voltage-resistant wafer-scale 4H-SiC ultraviolet photodetector with high uniformity enabled by electric field distribution modulation  

作　　者：Wanglong Wu Shuo Liu Zhiyuan Liu Xinyun Zhou Xiong Yang Xinyun He Qinglin Xia Mianzeng Zhong Jingbo Li Jun He 

机构地区：[1]Hunan Key Laboratory of Nanophotonics and Devices,School of Physics,Central South University,Changsha 410083,China [2]Guangdong Provincial Key Laboratory of Chip and Integration Technology,School of Semiconductor Science and Technology,South China Normal University,Foshan 528225,China [3]Zhejiang Xinke Semiconductor Co.,Ltd,Hangzhou 311421,China [4]College of Optical Science and Engineering,Zhejiang University,Hangzhou 310027,China

出　　处：《Nano Research》2025年第4期544-551,共8页纳米研究(英文版)

基　　金：financially supported by the National Natural Science Foundation of China(Nos.12174451,12474080,and 12274467);the Science and Technology Innovation Program of Hunan Province(No.2022RC1199);the High Performance Computing Center of Central South University,Central South University Graduate Student Independent Exploration and Innovation Project(Nos.2024ZZTS0454 and 2024ZZTS0778).

摘　　要：Wide bandgap semiconductors are ideal materials for ultraviolet(UV)photodetectors due to their stable optoelectronic properties and high efficient UV light absorption.However,photodetectors based on pure wide bandgap semiconductors typically have large dark current that inhibit the devices from generating high UV photoresponse.Herein,a high-voltage-resistant wafer-scale 4H-SiC UV photodetector enabled by electric field distribution modulation is proposed.As the P+region introduced by the ion implantation process affects the electric field distribution and suppresses the Schottky barrier lowering effect,the dark current of the device reaches pA-level,and remains nA-level at a bias voltage of 1 kV.Meanwhile,the device exhibits superior photoresponse,including a prominent responsivity of 105.7 A/W,a remarkable detectivity of 1.01×10^(14) Jones,an outstanding photoconductive gain of 477,and a high light on/off ratio of 1.84×10^(5).This device provides a reliable solution for high-performance UV photodetectors that require high-voltage-resistant in special areas,and the wafer-scale fabrication process makes it feasible for practical applications.

关 键 词：high-voltage-resistant wafer-scale 4H-SIC electric field distribution ultraviolet photodetector 

分 类 号：TN36[电子电信—物理电子学]