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作 者:史钧达 杨汝琪 胡杜楠 刘如敏 余涛[1] 吕建国[1] SHI Junda;YANG Ruqi;HU Dunan;LIU Rumin;YU Tao;LYU Jianguo(State Key Laboratory of Silicon and Advanced Semiconductor Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310058,China)
机构地区:[1]浙江大学材料科学与工程学院,硅及先进半导体材料全国重点实验室,浙江杭州310058
出 处:《发光学报》2025年第4期597-614,共18页Chinese Journal of Luminescence
基 金:浙江省“尖兵领雁+X”研发攻关计划(2024C01252(SD2))。
摘 要:ZnO是一种典型的第三代半导体材料,宽禁宽度3.37 eV。本征ZnO是一种n型半导体,采用施主元素掺杂技术可以显著提升其n型导电特性。ZnO基透明导电薄膜具有原料来源丰富、制备方法多样、可室温生长等优势,可应用于光电、传感、光热等诸多领域。其中,Al掺杂ZnO(AZO)是一种典型的透明导电氧化物(TCO),备受关注。本文以AZO薄膜为主要代表,综述了ZnO基透明导电薄膜的最新研究进展,包括掺杂ZnO单层薄膜、ZnO基多层薄膜、柔性ZnO基薄膜等不同类型透明导电薄膜的物理化学性质;重点探讨了ZnO基透明导电薄膜的迁移率、禁带宽度、透射率/吸收率/反射率等光电特性及其内在关系;详细介绍了ZnO基透明导电薄膜在发光二极管、太阳能电池、传感器、半导体加热等领域的应用情况;最后对存在的挑战和未来发展趋势进行了展望。ZnO is a typical third-generation semiconductor with a wide bandgap of 3.37 eV.Intrinsic ZnO is an n-type semiconductor,and the use of donor element doping technology can significantly enhance its n-type conductivity.ZnO-based transparent conductive thin films have the advantages of abundant raw material sources,diverse preparation methods,and room temperature growth,which can be applied in many fields such as optoelectronics,sensing,photothermal,etc.Among them,Al doped ZnO(AZO)is a typical transparent conductive oxide(TCO),which has attracted much attention in recent years.This article takes AZO thin film as the main representative and summarizes the latest research progress of ZnO based transparent conductive films,including the physical and chemical properties of different types of transparent conductive thin films such as doped ZnO single-layer thin films,ZnO based multi-layer thin films,and flexible ZnO based thin films.We focus on the optoelectronic properties(e.g.,mobility,bandgap width,transmittance/absorption/reflectivity)of ZnO based transparent conductive films,exploring their inherent relationships.The practical applications are introduced in detail for ZnO based transparent conductive films in the fields of light-emitting diodes,solar cells,sensors,semiconductor heating,and so on.The existing challenges and future development trends are also discussed.
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