双分子钝化埋底界面制备高效钙钛矿太阳能电池  

Bimolecularly Passivated Buried Interface for Highly Efficient Perovskite Solar Cells

作　　者：文超 陈茜羽 卢颖婕 刘佳澎 姚广平 王丽丹 苏子生 WEN Chao;CHEN Qianyu;LU Yingjie;LIU Jiapeng;YAO Guangping;WANG Lidan;SU Zisheng(School of Advanced Manufacturing,Fuzhou University,Quanzhou 362251,China;Institute for Photonics Technology,Fujian Key Laboratory for Advanced Micro-Nano Photonics Technology and Devices,Fujian Provincial Collaborative Innovation Center for Ultra-Precision Optical Engineering and Applications,Quanzhou Normal University,Quanzhou 362000,China;College of Physics and Information Engineering,Quanzhou Normal University,Quanzhou 362000,China;College of Chemical Engineering and Material,Quanzhou Normal University,Quanzhou 362000,China;College of Photonic and Electronic Engineering,Fujian Normal University,Fuzhou 350117,China)

机构地区：[1]福州大学先进制造学院,福建泉州362251 [2]泉州师范学院光子技术研究院福建省先进微纳光子技术与器件重点实验室,福建省超精密光学工程技术与应用协同创新中心,福建泉州362000 [3]泉州师范学院化工与材料学院,福建泉州362000 [4]泉州师范学院物理与信息工程学院,福建泉州362000 [5]福建师范大学光电与信息工程学院,福建福州350117

出　　处：《发光学报》2025年第4期721-729,共9页Chinese Journal of Luminescence

基　　金：福建省自然科学基金(2023J01890);泉州市科技计划(2020C025R);泉州师范学院大学生创新创业训练计划(202410399001)。

摘　　要：钙钛矿太阳能电池(PSCs)的电子收集特性是影响器件性能的关键因素之一。化学浴沉积法制备的二氧化锡(SnO_(2))是PSCs常见的电子传输层材料,但是,其表面常存在大量氧空位缺陷,在SnO_(2)/钙钛矿埋底界面处造成非辐射复合损失。本文利用四氯化锡(SnCl_(4))和铬酸铵((NH_(4))_(2)CrO_(4))双分子钝化PSCs埋底界面,成功制备了光电转换效率达到23.71%的器件。SnCl_(4)水解后在SnO_(2)薄膜上生成小尺寸的SnO_(2)颗粒,形成平整的表面结构;(NH_(4))_(2)CrO_(4)作为氧化剂,产生p型半导体Cr_(2)O_(3)超薄层,与SnO_(2)构成p-n结,补偿SnO_(2)表面多余的氧空位,减少埋底界面处的非辐射复合,提高电荷的提取效率。同时,在双分子钝化的SnO_(2)上制备的钙钛矿薄膜晶粒尺寸增大,缺陷密度降低。Electron extraction property is one of the important issues that limited the performance of perovskite solar cells(PSCs).SnO_(2)electron transport layer fabricated with a chemical bath deposition method has been successful used in PSCs.However,it usually has a large number of oxygen vacancies at its surface,which would act as nonradiative recombination centers at the SnO_(2)/perovskite buried interface.Herein,a SnCl_(4)and(NH_(4))_(2)CrO_(4)bimolecularly passivated buried interface strategy is adopted in PSCs,and the device shows a power conversion efficiency of 23.71%.The hydrolysis of SnCl_(4)forms a layer of small SnO_(2)nanoparticles on the surface SnO_(2),resulting in a smooth surface.(NH_(4))_(2)CrO_(4)acts as an oxidizer and forms a thin layer of p-type semiconductor Cr_(2)O_(3)on n-type SnO_(2).Such p-n heterojunctions compensate the oxygen vacancies on SnO_(2)surface,which decreases the nonradiative recombination at the buried interface and hence increases the electron extraction efficiency.Meanwhile,the perovskite film deposited on the bimolecularly passivated SnO_(2)exhibits increased grain size,leading to decreased concentration of defects.

关 键 词：钙钛矿太阳能电池 二氧化锡 缺陷 双分子钝化 

分 类 号：O475.31[理学—半导体物理] O482.7[理学—物理] TM914.4[电气工程—电力电子与电力传动]