Indium oxide buffer layer for perovskite/Si 4-terminal tandem solar cells with efficiency exceeding 30%  

作　　者：Liming Du Can Li Yuhui Jiang Fangfang Cao Chunmei Jia Zhi Wan Rui Meng Jishan Shi Chuanxiao Xiao Zhe Liu Zhen Li 

机构地区：[1]State Key Laboratory of Solidification Processing,Center for Nano Energy Materials,School of Materials Science and Engineering,Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene(NPU),Xi'an710072,Shaanxi,China [2]Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,Zhejiang,China [3]Ningbo New Materials Testing and Evaluation Center Co.,Ltd.,Ningbo 315201,Zhejiang,China

出　　处：《Journal of Energy Chemistry》2025年第3期189-196,共8页能源化学(英文版)

基　　金：supported by National Natural Science Foundation of China(Grant Nos.52102304 and 52172238);Open Project of Shaanxi Laboratory of Aerospace Power(Grant No.2021SXSYS01-03);Shaanxi Bureau of Science and Technology(Award No.2022KWZ-07);the Fundamental Research Funds for the Central Universities(Grant No.3102019JC0005)。

摘　　要：Perovskite/Si tandem solar cells(TSCs)present great potential to surpass the Shockley-Queisser limit of single-junction solar cells for further advancing the power conversion efficiency(PCE)of solar cells.However,the fabrication of TSCs usually encounters challenge of selecting suitable sputtering buffer layer(SBL)to prevent the bombardment during the transparent electrode deposition.Herein,we introduce an indium oxide(In_(2)O_(3))buffer layer via e-beam deposition to fabricate semi-transparent perovskite solar cells(ST-PSCs).The optical transmittance and electrical conductivity of In_(2)O_(3)highly depend on the deposition rate.High deposition rate results in high ratio of metallic indium in the film,which causes severe parasitic absorption.A 20 nm-thick In_(2)O_(3)film deposited at lower rate demonstrated high conductivity,transmittance and robust protection during sputtering.A 1.68 eV ST-PSC incorporating this In_(2)O_(3)buffer layer exhibits a champion PCE of 20.20%,demonstrating the excellent optoelectronic and protective properties of In_(2)O_(3).When combined with a Si subcell,the 4-terminal TSC obtains a remarkable PCE of 30.04%,Importantly,the unencapsulated ST-PSC maintained 80%of initial PCE after 423 h of continuous light soaking in N_(2).This work has provided a facile and instrumental transparent SBL strategy for perovskite/Si TSCs.

关 键 词：E-beam deposition SPUTTERING Transparent electrode Perovskite solar cells In_(2)O_(3) 

分 类 号：TM914.4[电气工程—电力电子与电力传动]