基于极化波形调控的P(VDF-TrFE)磁电薄膜非易失性存储性能研究  

Research on Non-volatile Storage Property of P(VDF-TrFE)Magnetoelectric Thin Film Based on the Regulation of Polarization Waveforms

作　　者：张嘉伟 韩涛[1,2] 蒙轩 宋宸 秦司晨 Hajjaji Abdelowahed Fouad Belhora ZHANG Jiawei;HAN Tao;MENG Xuan;SONG Chen;QIN Sichen;Hajjaji ABDELOWAHED;Fouad BELHORA(School of Electrical Engineering,Xi’an University of Technology,Xi’an 710048,Shaanxi Province,China;Yan’an Power Supply Company,State Grid Shannxi Electric Power Company,Yan’an 716000,Shaanxi Province,China;Laboratory of Engineering Sciences for Energy(LabSIPE),National School of Applied Sciences,Chouaib Doukkali University,El Jadida 24000,Morocco)

机构地区：[1]西安理工大学电气工程学院,陕西省西安市710048 [2]国网陕西省电力有限公司延安供电公司,陕西省延安市716000 [3]Laboratory of Engineering Sciences for Energy(LabSIPE),National School of Applied Sciences,Chouaib Doukkali University,El Jadida 24000,Morocco

出　　处：《电力信息与通信技术》2025年第4期1-8,共8页Electric Power Information and Communication Technology

摘　　要：数据存储作为电力信息系统的关键构成部分,其高可靠性、快速读写以及强大的兼容性尤为重要。基于多铁性磁电材料自旋电子学特性的非易失性存储器,读写快且存储安全,有望在未来的电力设备中存储设备配置信息与实时数据缓存。然而,利用直流电压进行极化处理时,磁电材料呈现出极化程度有限且均匀性不足,致使非易失性存储器的存储效率显著下降。交流电压可有效地驱动材料内部偶极子的定向排列,增强电荷的注入与存储效果,是提升存储器存储效率的有效方法。文章通过电晕极化调控技术,研究了不同电压波形对P(VDF-TrFE)磁电薄膜磁电性能的影响。实验结果表明,电压波形为三角波信号时,P(VDF-TrFE)磁电薄膜的磁电电压系数达37.59 mV/(cm·Oe),较直流和交流信号分别提高了19.5%和9.7%,有效提升了磁电材料的宏观磁电性能。数据存储的发展为数据中心节能与扩容和智能电网设备存储领域提供技术支撑,以提供高效的本地存储,降低运营成本和能耗。As a crucial component of the power information system,data storage is particular important for its high reliability,fast read-write speed,and strong compatibility.Non-volatile memories(NVM)based on the spintronic properties of multiferroic magnetoelectric materials,which have the advantages of fast reading and writing speed and secure data storage,are expected to be used in future power devices to store device configuration information and real-time data caching.However,the polarization effect of ME materials polarized by DC voltage is insufficient,resulting in a degradation in the energy storage efficiency of NVM.AC voltage can more effectively drive the directional arrangement of dipoles inside the material and enhance the charge injection and storage effect,which is an effective method to improve the storage efficiency of the memory.Herein,the effect of various voltage waveforms on the ME performance of P(VDF-TrFE)ME film is investigated by corona polarization regulation technique.The obtained results suggest that the ME voltage coefficient could reach 37.59 mV/(cm·Oe)as the voltage waveform is triangular wave.It is worth noting that compared with DC and AC signals,the coefficient under triangular wave exhibits an increase of 19.5%and 9.7%,respectively,which effectively improves the macroscopic ME properties of ME materials.The advancement of data storage provides technical support for energy-saving and capacity expansion in data centers,and smart grid equipment storage.It enables efficient local storage and reduces operating costs and energy consumption.

关 键 词：非易失性存储器 数据存储 电晕极化法 P(VDF-TrFE)磁电薄膜 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] TB383[自动化与计算机技术—计算机科学与技术]