High-temperature optoelectronic synaptic devices based on 4H-SiC  

作　　者：Mingxuan BU Yue WANG Zhenyi NI Dongke LI Deren YANG Xiaodong PI 

机构地区：[1]State Key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China [2]Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,ZJU-Hangzhou Global Scientific and Technological Innovation Center,Zhejiang University,Hangzhou 311200,China

出　　处：《Science China(Information Sciences)》2025年第4期147-155,共9页中国科学(信息科学)(英文版)

基　　金：supported by National Natural Science Foundation of China(Grant Nos.U22A2075,92364204,91964107,U20A20209);Fundamental Research Funds for the Central Universities(Grant No.226-2022-00200);Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou(Grant No.TD2022012);support from the Qianjiang Distinguished Expert Program in Hangzhou。

摘　　要：Optoelectronic synaptic devices operating at high temperatures have application potential across many important fields,including the aerospace and defense industries.However,limited research exists on such devices.Herein,we fabricate4H-SiC-based high-temperature optoelectronic synaptic devices that are capable of achieving diverse synaptic functionalities at temperatures as high as 600 K.The synaptic functionalities are realized for these devices through carrier capture and release of the deep-level defects introduced via electronic irradiation.A 3×3 array of high-temperature optoelectronic synaptic devices enables the image memory functions.A neural network model constructed using this array addresses the issue of color quantization.The optoelectronic synaptic devices thus developed are capable of high-temperature applications.

关 键 词：optoelectronic synaptic devices 4H-SIC synaptic plasticity neuromorphic computing high-temperature devices 

分 类 号：TN36[电子电信—物理电子学]