基于4H-SiC的高温驱动电路设计与制造  

Design and Manufacture of 4H‑SiC High Temperature Driving Circuit

作　　者：田源 黄润华[1] 倪朝辉 刘涛[1] 张国斌 杨勇 柏松[1] TIAN Yuan;HUANG Runhua;NI Chaohui;LIU Tao;ZHANG Guobin;YANG Yong;BAI Song(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2025年第2期23-28,共6页Research & Progress of SSE

摘　　要：为解决SiC MOSFET在高温条件下性能受硅基驱动电路限制的问题,设计制造了一款基于4H-SiC材料的驱动电路,用于改善电路整体的耐高温能力,并且分别在常温(25℃)和高温(300℃)条件下对驱动电路的性能进行了测试。常温下驱动电路在无负载条件下的上升沿延迟和下降沿延迟分别为2.496μs和1.32μs,高温下两者分别为1.61μs和0.816μs。在输出功率为100 W、输出电压为56 V、母线电压为320 V的条件下对驱动电路进行带负载测试,常温下驱动电流的充电电流峰值为129 mA,放电电流峰值为120 mA;高温下驱动电流的充电电流峰值为264 mA,放电电流峰值为221 mA。测试结果表明,该驱动电路可在环境温度为300℃时正常工作,且随着环境温度在25~300℃范围内逐渐上升,该驱动电路的驱动能力以及响应速度逐渐提升。In order to solve the problem that the performance of SiC MOSFET was limited by silicon‑based driving circuit at high temperature,a driving circuit based on 4H‑SiC material was designed and manufactured in this paper to improve the overall high temperature resistance of the circuit.The performance of the driving circuit was tested at room temperature(25℃)and high temperature(300℃).At room temperature,the rising edge delay and falling edge delay of the driving circuit under no‑load condition are 2.496μs and 1.32μs respectively,and they are 1.61μs and 0.816μs respectively at 300℃.Under the conditions of an output power of 100 W,an output voltage of 56 V,and a bus voltage of 320 V,the driving circuit was subjected to load testing.At room temperature,the peak charging and discharging current are 129 mA and 120 mA respectively,and they are 264 mA and 221 mA respectively at 300℃.The test results show that the driving circuit can work normally when the ambient temperature is 300℃,and with the ambient temperature rising from 25℃to 300℃,the driving ability and response speed of the driving circuit are gradually improved.

关 键 词：碳化硅 驱动电路 金属氧化物半导体晶体管 

分 类 号：TN432[电子电信—微电子学与固体电子学]