面向3D-SiP模组的超宽带互联技术研究  

Research on the Ultra⁃wideband Interconnection Technology for 3D⁃SiP Module

作　　者：吕嘉然 阚尧 刘士杰 徐梦苑 汤君坦 成海峰[1,2] LYU Jiaran;KAN Yao;LIU Shijie;XU Mengyuan;TANG Juntan;CHENG Haifeng(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]固态微波器件与电路全国重点实验室,南京210016

出　　处：《固体电子学研究与进展》2025年第2期47-53,共7页Research & Progress of SSE

摘　　要：针对有源相控阵天线前端向低剖面、超宽带、高集成方向发展的趋势,基于三维系统级封装(Three-dimensional system-in-package, 3D-SiP)技术的TR模组成为了当前研究的热点。本文面向一种采用高温共烧陶瓷(High temperature co-fired ceramic, HTCC)技术和球栅阵列(Ball grid array, BGA)堆叠技术实现的3D-SiP TR模组,开展了三维超宽带互联结构的技术研究。对三种基础结构进行了超宽带仿真研究,在此基础上实现了组成3DSiP TR模组内部的2~18 GHz的高密度三维互联结构,并对采用该互联结构的3D-SiP TR模组进行了实物研制及测试。测试结果显示,该3D-SiP TR模组在2~18 GHz频带内反射系数≤-10 dB,插入损耗≤3.8 dB。In response to the evolving trend of active phased array antenna front-ends towards low profile,ultra-wideband,and high integration,research has emerged focusing on TR modules based on three-dimensional system-in-package(3D-SiP)technology.This paper was centered on a 3D-SiP TR module implemented using high temperature co-fired ceramic(HTCC)technology and ball grid array(BGA)stacking for ultra-wideband interconnect structures.Ultra-wideband simulation studies were conducted on three basic structures,upon which the internal interconnect structure for the 3D-SiP TR module was subsequently realized.Furthermore,physical prototypes were developed and tested on the high-density 3D assemblies within the frequency range of 2 GHz to 18 GHz.It is indicated by the test results that,within the 2-18 GHz frequency band,the 3D-SiP TR module exhibits a reflection coefficient of less than-10 dB and an insertion loss of less than 3.8 dB.

关 键 词：超宽带 垂直互连 高温共烧陶瓷(HTCC)技术 三维系统级封装(3D-SiP) 

分 类 号：TN61[电子电信—电路与系统]