具有N型赝埋层的新型SiGe-HBT器件及应用研究  

Research on New SiGe‑HBT Devices with Pseudo N‑type Buried Layer and Its Application

作　　者：刘冬华 陈曦 钱文生 LIU Donghua;CHEN Xi;QIAN Wensheng(Shanghai Huahong Grace Semiconductor Manufacturing Corporation,Shanghai,201206,CHN)

机构地区：[1]上海华虹宏力半导体制造有限公司,上海201206

出　　处：《固体电子学研究与进展》2025年第2期97-100,共4页Research & Progress of SSE

摘　　要：提出了一种新型锗硅异质结双极晶体管(Germanium silicon heterojunction bipolar transistor,SiGe-HBT)结构,摒弃了传统SiGe-HBT中的深隔离沟槽、N型埋层以及通过外延生长形成的集电区。通过在浅隔离槽底部采用离子注入技术形成N型赝埋层(N-type pseudo buried layer,PNBL),实现了集电区的横向扩展。该结构包含位于本征基区下方的纵向集电区以及场氧底部PNBL形成的横向集电区。对新型SiGe-HBT器件的直流与射频特性进行了测试,结果显示高速管的特征频率达到100 GHz,电流增益为270。通过增加PNBL与集电极有源区之间的距离,实现了器件的高耐压特性。采用BV_(ceo)=10 V的高压SiGe-HBT器件设计的一款功率放大器,在4.5 V电源电压下,当输入功率为0 dBm时,输出功率达到27.5 dBm,效率接近50%。A novel germanium silicon heterojunction bipolar transistor(SiGe-HBT)structure was proposed in this article.The deep isolation grooves,N-type buried layers,and collector regions formed by epitaxial growth in traditional SiGe-HBT were eliminated.By using ion implantation technology at the bottom of the shallow isolation to form an N-type pseudo buried layer(PNBL),the lateral expansion of the collector area has been achieved.This structure includes a longitudinal collecting region located below the intrinsic base region and a transverse collecting region formed by a PNBL at the bottom of the field oxygen.The DC and RF characteristics of the new SiGe-HBT device were tested,and the results showed that the cutoff frequency of the high-speed transistor reached 100 GHz,with a current gain of 270.By increasing the distance between the PNBL and the active region of the collector,the high voltage withstand characteristics of the device were achieved.A power amplifier is designed using high-voltage SiGe-HBT devices with BVceo=10 V.At a power supply voltage of 4.5 V and an input power of 0 dBm,the output power of the power amplifier reaches 27.5 dBm,with an efficiency of nearly 50%.

关 键 词：N型赝埋层 锗硅异质结双极晶体管 深接触孔 

分 类 号：TN433[电子电信—微电子学与固体电子学] TN32[电气工程—电力系统及自动化] TM74