高深度通孔TSV转接板成孔工艺研究  

Research on High-depth Via Formation Process in TSV Interposer

作　　者：高浩 张伟强 顾玥 王一丁 李浩[1] 王越飞 崔凯[1] GAO Hao;ZHANG Weiqiang;GU Yue;WANG Yiding;LI Hao;WANG Yuefei;CUI Kai(Nanjing Research Institute of Electronics Technology,Nanjing 210039,China)

机构地区：[1]南京电子技术研究所,江苏南京210039

出　　处：《电子机械工程》2025年第2期41-45,51,共6页Electro-Mechanical Engineering

摘　　要：文中针对硅基微流道等硅通孔(Through Silicon Via,TSV)转接板应用中兼容基板厚度和层间电互连的需求,开发厚度超过500μm的通孔TSV转接板制备工艺,突破高深度通孔刻蚀的关键工艺技术。制备的TSV转接板的孔径为80μm,深度超过500μm,深宽比超过6∶1,且垂直度大于89.85°,同时能够将侧壁粗糙度控制在250 nm以内。基于该成孔工艺制备的TSV转接板具有良好的膜层均匀性和电互连效果,能够满足高机械强度、高腔深、低成本的TSV转接板的应用需求。In order to meet the requirements of compatibilizing substrate thickness and interlayer electrical interconnection in application of the through silicon via(TSV)interposer(such as silicon microchannel),the preparation process of TSV interposer with depth of more than 500μm is developed,which has broken through the key technologies of high-depth TSV etching.The aperture of the prepared TSV interposer is 80μm,the depth is more than 500μm,the depth to width ratio is more than 6∶1,the perpendicularity is more than 89.85°and the scallop can be controlled within 250 nm.The TSV interposer,which is prepared based on the via forming technology,has favorable film uniformity and electrical interconnection and can meet the application requirements of TSV interposer with high mechanical strength,deep cavities and low cost.

关 键 词：硅通孔 刻蚀 高深度 

分 类 号：TG52[金属学及工艺—金属切削加工及机床]