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作 者:江紫玲 朱睿 张婕 Jiang ZiLing;Zhu Rui;Zhang Jie(School of Mechanical Engineering,Jiangnan University,Wuxi 214122,China;Jiangsu Key Laboratory of Advanced Food Manufacturing Equipment and Technology,Wuxi 214122,China)
机构地区:[1]江南大学机械工程学院,江苏无锡214122 [2]江苏省先进食品装备技术重点实验室,江苏无锡214122
出 处:《半导体技术》2025年第5期449-458,共10页Semiconductor Technology
摘 要:有机场效应晶体管(OFET)因其低成本和优异的可兼容特性,是柔性电子领域的重要器件。通过构建聚丙烯酸(PAA)/SU-8双层介电结构,结合全溶液法制备了基于6,13-双(三异丙基硅烷基乙炔基)(TIPS)-并五苯半导体层的OFET。通过原子力显微镜(AFM)和接触角测量仪分析表面特性,PAA/SU-8双层薄膜的均方根(RMS)粗糙度(0.284 nm)较PAA单层薄膜(2.77 nm)显著降低,表面接触角(83°)接近SU-8单层薄膜(85°)且明显高于PAA单层薄膜(60°)。采用傅里叶变换红外(FTIR)光谱和LCR测试仪分析不同介电层的界面极性和介电性能,揭示了双介电层通过高电容与低极性界面的协同作用,有效改善了器件的电荷传输效率与稳定性。对PAA/SU-8双层结构OFET的性能进行测试,结果表明,PAA/SU-8双层器件表现出低阈值电压(1.0 V)、高电流开关比(>10^(4))、高迁移率(0.244 cm^(2)·V^(-1)·s^(-1))和良好的亚阈值摆幅(2.5 V/dec),显著优于SU-8单层器件。Organic field-effect transistors(OFETs)are important devices in the field of flexible electronics due to their low-cost and excellent compatibility features.OFETs based on 6,13-bis(triisopropylsilylethynyl)(TIPS)-pentacene semiconductor layer were fabricated by constructing a polyacrylic acid(PAA)/SU-8 bilayer dielectric structure in combination with the fully solution method.Surface characteristics were analyzed by atomic force microscope(AFM)and contact angle measurement instrument.The root mean square(RMS)roughness of the PAA/SU-8 bilayer film(0.284 nm)is significantly lower than that of the PAA single layer film(2.77 nm),and the surface contact angle(83°)is close to that of the SU-8 single layer film(85°),and significantly higher than that of the PAA single layer film(60°).Fourier-transform infrared(FTIR)spectroscopy and LCR tester were employed to analyze the interfacial polarity and dielectric properties of the different dielectric layers,revealing that the bilayer dielectric structure effectively enhances the charge transport efficiency and stability of the device through the synergistic effect of high capacitance and low-polarity interfaces.The performance of the PAA/SU-8 bilayer OFET was tested.The results show that the PAA/SU-8 bilayer device exhibits a low threshold voltage(1.0 V),high on/off current ratio(>10^(4)),high mobility(0.244 cm^(2)~·V^(-1)·s^(-1))and a good subthreshold swing(2.5 V/dec),significantly outperforming the SU-8 single-layer device.
关 键 词:有机场效应晶体管(OFET) 双层介电结构 聚丙烯酸(PAA)聚电解质 SU-8光刻胶 溶液法 6 13-双(三异丙基硅烷基乙炔基)(TIPS)-并五苯
分 类 号:TN321.5[电子电信—物理电子学] TN305
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