横向结构压接IGBT动态测试平台设计及其寄生电感抑制  

Design of A Dynamic Testing Platform for Press Pack IGBT Based on Transverse Structure and Its Parasitic Inductance Suppression

作　　者：袁文迁 季一润 杨敏祥 槐青 袁茜 郝震 刘铁城 Yuan Wenqian;Ji Yirun;Yang Minxiang;Huai Qing;Yuan Xi;Hao Zhen;Liu Tiecheng(Equipment Condition Evaluation Center,State Grid Jibei Electric Power Research Institute,Beijing 100045,China;Operation and Maintenance Technology of VSC-HVDC Transmission System Laboratory of State Grid Co.,Ltd.,Beijing 100045,China;State Grid Jibei Electric Power Co.,Ltd.,Beijing 100054,China)

机构地区：[1]国网冀北电力有限公司电力科学研究院设备状态评价中心,北京100045 [2]柔性直流输电运维检修技术国家电网有限公司实验室,北京100045 [3]国网冀北电力有限公司,北京100054

出　　处：《半导体技术》2025年第5期514-522,共9页Semiconductor Technology

基　　金：国家电网公司总部科技项目(5500-202322172A-1-1-ZN)。

摘　　要：传统的纵向结构压接IGBT(PPI)测试平台的叠层母排区域互感较强,但PPI与回流母排的互感较弱,同时无法对被测和陪测器件分别施加不同的机械压力和温度。针对这一问题,研制了一种新型横向结构测试平台,通过改变IGBT周边区域电流分布,增强互感,使该区域寄生电感降低了36.9%,有效降低了回路总寄生电感。且通过将被测IGBT和陪测续流二极管(FWD)并排布置,可以在不同的机械压力和温度条件下对被测IGBT和FWD开展特性分析。该平台测试了125℃以内4.5 kV PPI的动态特性,通过实测数据分析,该平台的寄生电感约为110 nH,表明测试平台具有良好的电气特性,实现了电气结构与机械压力结构的良好兼顾。The concentional longitudinal structure press pack IGBT(PPI)testing platform has strong mutual inductance in the area of the stacked busbar,but has weak mutual inductance between PPI and the return busbar,and at the same time,this structure can't apply different mechanical pressures and temperatures to the tested and accompanying devices respectively.To address this problem,a novel transverse structure testing platform was developed.By changing the current distribution in the surrounding area of IGBT,the mutual inductance is enhanced and the parasitic inductance is reduced by 36.9%in this area,effectively reducing the total parasitic inductance of the circuit.By arranging the tested IGBT and accompanying freewheeling diode(FWD)side by side,it is possible to analyze the characteristics of the tested IGBT and accompanying FWD with different mechanical pressures and temperatures.The dynamic characteristic of the 4.5 kV PPI within 125℃was tested by the platform.Through the analysis of the measured data,the parasitic inductance of the testing platform is about 110 nH,which indicates that the testing platform has excellent electrical characteristics,achieving a good balance between electrical structure and mechanical pressure structure design.

关 键 词：压接IGBT(PPI) 动态测试平台 横向结构 寄生电感 互感 

分 类 号：TN32[电子电信—物理电子学] TN307