一种具有高电流能力的雪崩触发栅控晶闸管  

A novel Avalanche Trigger MCT with high current capacity

作　　者：孙新淇 杨禹霄 邓时雨 陈资文 刘超[1] 孙瑞泽[1] 陈万军[1] SUN Xinqi;YANG Yuxiao;DENG Shiyu;CHEN Ziwen;LIU Chao;SUN Ruize;CHEN Wanjun(School of Integrated Circuit Science and Engineering,University of Electronic Science and Technology of China,Chengdu Sichuan 610054,China)

机构地区：[1]电子科技大学集成电路科学与工程学院,四川成都610054

出　　处：《太赫兹科学与电子信息学报》2025年第4期346-352,共7页Journal of Terahertz Science and Electronic Information Technology

基　　金：国家自然科学基金资助项目(U21A20499,62334003)。

摘　　要：提出一种新的利用雪崩触发的MOS控制晶闸管(AT-MCT),在电容脉冲放电中实现了高电流峰值、高电流上升能力(di/dt)及非工作状态的非激活保护功能。器件结构包含P-body中的高掺杂雪崩层(N-AL)以及阴极区域和MOS结构分离的N+。当施加栅极电压时,MOS产生的沟道将N-drift电势转移至N-AL中,高掺杂N-AL中由于电场尖峰而发生雪崩,产生的电子-空穴对作为晶闸管的基极电流使AT-MCT快速建立自反馈机制;同时,由于雪崩建立的正反馈过程大大改善了瞬态载流子二维传输效应,增加了瞬态开启过程中元胞的有效导通区域,从而实现更加高效的能量转化。AT-MCT相比于阴极短路的MCT(CS-MCT),电流峰值提高了40%,di/dt能力提升了31%。此外,通过对N-AL掺杂浓度的设计,可实现在非工作状态下的非激活保护功能,提升脉冲功率系统的可靠性。A novel Avalanche Triggered MOS-Controlled Thyristor(AT-MCT)is proposed,which achieves high current peak,high current rise capability(di/dt),and non-activation protection in the non-operating state during capacitor pulse discharge.The device incorporates a highly doped N Avalanche Layer(N-AL)buried in a Pbody,with an N+region near the cathode separated from the MOS structure.When a gate voltage is applied,the channel generated by the MOS transfers the potential of the N-drift region to the N-AL.The highly doped N-AL experiences avalanche due to the electric field peak,and the generated electron-hole pairs serve as the base current of the thyristor,enabling the AT-MCT to rapidly establish a self-feedback mechanism.Meanwhile,the positive feedback process established by the avalanche significantly improves the two-dimensional transient carrier transport effect,increases the effective conduction area of the cell during transient turn-on,and thus achieves more efficient energy conversion.The AT-MCT exhibits a 40%increase in current peak and a 31%increase in di/dt capability compared to Cathode-Shorted MCT(CS-MCT).Moreover,by designing the doping concentration of the N-AL,non-activation protection in the non-operating state can be realized,thereby enhancing the reliability of the pulsed power system.

关 键 词：雪崩 电流峰值 高电流上升能力(di/dt) 瞬态载流子二维传输效应 非激活保护 

分 类 号：TN335[电子电信—物理电子学]