自适应逐周期逼近型SiC MOSFET栅极驱动芯片  

Adaptive successive approximation SiC MOSFET active gate driver

作　　者：张烁[1] 周清越 李超 陈伟铭 刘畅[1] 童乔凌[1] ZHANG Shuo;ZHOU Qingyue;LI Chao;CHEN Weiming;LIU Chang;TONG Qiaoling(School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan 430074,China;State Grid Fujian Electric Power Research Institute,Fuzhou 350007,China;Fujian Key Enterprise Laboratory of High Reliability for Power Distribution Technology,Fuzhou 350007,China)

机构地区：[1]华中科技大学集成电路学院,湖北武汉430074 [2]国网福建省电力有限公司电力科学研究院,福建福州350007 [3]福建省高供电可靠性配电技术企业重点实验室,福建福州350007

出　　处：《华中科技大学学报(自然科学版)》2025年第3期135-141,共7页Journal of Huazhong University of Science and Technology(Natural Science Edition)

基　　金：国家电网有限公司科技项目(5500-202321512A-3-2-ZN);面向碳化硅器件的自适应多段式驱动芯片关键技术研究。

摘　　要：为了抑制碳化硅金属氧化物半导体场效应晶体管(SiC MOSFET)在开通过程中产生的电流过冲,设计了一种自适应逐周期逼近型SiC MOSFET有源栅极驱动芯片.通过对SiC MOSFET的开通过程的分析,总结出电流过冲的产生机理,提出了抑制电流过冲的方案.驱动通过检测栅极电压和漏源电压判断SiC MOSFET的开通阶段,进行三段式电流控制,在降低电流过冲的同时,将漏源电压转换率(d V/dt)限制在安全水平.使用自适应逐周期逼近的反馈控制技术补偿了反馈环路的控制延时,能根据工况自适应调节电流切换点.采用东部高科180 nm BCD工艺实现,有效面积为2300μm×2100μm.仿真结果表明:相较于传统栅极驱动,在相同的d V/dt条件下,电流过冲下降了13.7%,开通损耗降低了38%.In order to suppress the current overshoot during the turn-on process of silicon carbide metal oxide semiconductor field effect transistors(SiC MOSFET),an adaptive successive approximation active gate driver for SiC MOSFETs was presented.Through an analysis of the turn-on process of SiC MOSFETs,the mechanism of current overshoot was summarized,and a solution for suppressing current overshoot was proposed.The proposed driver detected the gate voltage and drain-source voltage to determine the turn-on stage of the SiC MOSFET,and implemented a three-stage current control to reduce the overshoot current while limiting the drain-source voltage slew rate(d V/dt) to a safe level.By using adaptive cycle by cycle approximation feedback control technology,the control delay of the feedback loop was compensated,and the current switching point can be adaptively adjusted according to the working conditions.The 180 nm BCDprocess from DB HiTek was adopted,with an effective chip area of 2 300μm×2 100 μm.Simulation results show that,compared to conventional gate drivers,under the same d V/dt conditions,there is a reduction of 13.7% in current overshoot and a decrease of 38% in turn-on loss.

关 键 词：碳化硅金属氧化物半导体场效应晶体管(SiC MOSFET) 有源栅极驱动 自适应 电流过冲 开通损耗 逐周期逼近 

分 类 号：TN322.8[电子电信—物理电子学]