BCD工艺栅极驱动器总剂量效应  

Total ionizing dose effect on gate drivers fabricated by BCD technology

作　　者：许世萍 崔江维[1,2] 郑齐文 刘刚[3] 邢康伟 李小龙 施炜雷 王信[1,2] 李豫东 郭旗[1,2] Xu Shiping;Cui Jiangwei;Zheng Qiwen;Liu Gang;Xing Kangwei;Li Xiaolong;Shi Weilei;Wang Xin;Li Yudong;Guo Qi(Xinjiang Key Laboratory of Extreme Environment Electronics,Key Laboratory of Functional Materials and Devices for Special EnvironmentalConditions,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China;University of Chinese Academy of Sciences,Beijing 100049,China;Beijing YanDong Microelectronic Co.,Ltd.,Beijing 100176,China)

机构地区：[1]新疆极端环境电子学重点实验室,特殊环境条件功能材料与器件重点实验室,中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]中国科学院大学,北京100049 [3]北京燕东微电子科技有限公司,北京100176

出　　处：《强激光与粒子束》2025年第5期86-93,共8页High Power Laser and Particle Beams

基　　金：新疆维吾尔自治区重点研发计划项目(2023B01008);国家重点研发计划项目(2021YFB2401602);国家自然科学基金项目(12275352);新疆维吾尔自治区自然科学基金项目(2022D01E92);中国科学院青年创新促进会项目。

摘　　要：针对一款BCD工艺栅极驱动器,采用环栅结构进行总剂量效应加固。通过^(60)Co γ辐照试验,对比了加固和非加固器件电学参数随剂量变化情况。结果表明,总剂量辐射会导致器件的输出电压与电流特性发生退化,出现转换电压下降与输出电流上升的现象,同时发现总剂量辐射对输出电阻几乎无影响。对比两种栅极驱动器辐照前后的测试结果,证明环栅加固方法对抑制总剂量辐射引起的边缘漏电有一定的效果,但辐照总剂量达到500 krad(Si)时,加固器件发生功能失效。通过仿真模拟各级晶体管辐射损伤对器件最终输出结果的影响,确定初级施密特反相器内阈值电压漂移影响转换电压,而末级晶体管阈值电压漂移导致输出高电平下降。The BCD technology integrates Bipolar,Complementary Metal Oxide Semiconductor(CMOS),and Double Diffused MOSFET(DMOS)within a single chip,widely utilized in electronic components and system production.Gate drivers fabricated by BCD technology can reduce transmission delays,lower power consumption,and enhance drive capabilities.However,the radiation effects in space environments may lead to performance degradation and potentially jeopardize the safety of spacecraft.This paper focuses on gate drivers based on BCD technology,employing an enclosed layout structure for total ionizing dose(TID)radiation hardening.Through TID irradiation tests,the electrical parameter variations between hardened and unhardened devices are compared.Results indicate that TID radiation causes degradation in the output voltage and current characteristics of the device,manifesting as a decrease in switching voltage and an increase in output current,while having a negligible impact on the output resistance.Comparing test outcomes from both types of drivers,it is evident that the ring-gate hardening method effectively mitigates edge leakage induced by TID radiation to a certain extent.Nevertheless,functional failure occurs in the devices at 500 krad(Si).

关 键 词：BCD工艺 栅极驱动器 总剂量效应 环栅加固器件 

分 类 号：TN432[电子电信—微电子学与固体电子学]