烧结温度对Bi/Sb为4:1的ZnO压敏陶瓷显微结构和电学性能的影响  

Effect of Sintering Temperature on Microstructure and Electrical Properties of ZnO Varistor Ceramics with Bi/Sb Ratio of 4∶1

作　　者：解成龙 陈智琴[1,2] 程丽红[1,2] 李文魁[1,2] 张豪[1,2] 艾建平[1,2] 姚金良 郑巧玲 XIE Chenglong;CHEN Zhiqin;CHENG Lihong;LI Wenkui;ZHANG Hao;AI Jianping;YAO Jinliang;ZHENG Qiaoling(College of Materials and Energy,Jiangxi Science&Technology Normal University,Nanchang 330013,China;Jiangxi Province Key Laboratory of Surface Engineering,Jiangxi Science&Technology Normal University,Nanchang 330013,China)

机构地区：[1]江西科技师范大学材料与能源学院,南昌330013 [2]江西科技师范大学材料表面工程江西省重点实验室,南昌330013

出　　处：《中国表面工程》2025年第1期195-202,共8页China Surface Engineering

基　　金：江西科技师范大学材料表面工程江西省重点实验室项目(2023KFJJ07);江西科技师范大学校级科研重点项目(2023XJZD011);江西科技师范大学大学生创新创业训练计划(S202411318043);国家自然科学基金(52267001);江西省科技厅自然科学基金(20212BAB204019)。

摘　　要：作为金属氧化物避雷器(MOA)的核心元件,ZnO压敏电阻的性能直接影响电力设备的绝缘水平及电力系统的过电压水平。高性能Zn O压敏电阻有利于提高避雷器的保护能力,同时还可实现设备的轻量化、小型化。传统高温烧结工艺存在能耗高的问题,为了提高Zn O压敏陶瓷的节能效果及综合性能,研究不同烧结温度(880、930、980、1030、1080℃)对Bi/Sb为4∶1的两种Zn O压敏陶瓷(ZB4、ZB6)显微结构、电学性能和晶界特征参数的影响。结果表明,ZB4和ZB6两种配方样品的压敏电压随着烧结温度升高呈先增大后减小的趋势,当烧结温度为930℃时,ZB4和ZB6样品的综合电学性能均最好。相同烧结温度下,ZB6样品中富Bi相的增加提高了其显微结构的均匀性,使得ZB6样品比ZB4样品有更高的晶界比例,在提升压敏电压的同时,提高其相应晶界势垒高度。ZB6-930样品(930℃烧结的ZB6)综合性能优良,压敏电压为1161 V/mm,非线性系数α为13.22,漏电流IL为24.5μA,晶界势垒高度Φb为2.97 eV。研究结果可为高性能ZnO压敏电阻的研制及节能效果的提升提供重要的试验与理论依据。As the core component of metal-oxide arresters,ZnO varistors directly affect the insulation level of power equipment and the overvoltage level of the power system.ZnO varistors are crucial in suppressing overvoltage in power transmission and distribution systems.High-performance ZnO varistors are beneficial for improving the protection capability of the arrester,while affording lightweight and miniaturized equipment.Optimizing multivariate regulation technology and improving the sintering process are important for the development of high-performance ZnO varistors.However,the typical high-temperature sintering processes consume a significant amount of energy.To improve the energy-saving effect and comprehensive performance of ZnO varistors,the effects of different sintering temperatures(880,930,980,1030,1080℃)on the microstructure,electrical properties,and grain-boundary characteristic parameters of two types of ZnO varistors(ZB4 and ZB6)with a Bi/Sb ratio of 4∶1 are investigated in this study.The results show that the ZnO grains grow gradually as the sintering temperature increases.At the same sintering temperature,the liquid-phase amount of the ZB6-series samples is higher than that of the ZB4-series samples,which is beneficial to the distribution of the second phase around the ZnO grains.This corresponds to an improvement in the uniformity of the microstructure of the samples and an increase in the effective grain boundaries.The breakdown voltages of the ZB4-and ZB6-series samples are 329-1074 V/mm and 429-1161 V/mm,respectively.These breakdown voltages first increase and then decrease as the sintering temperature increases.In both the ZB4-and ZB6-series samples,the Bi/Sb ratio is 4∶1.The Bi2O3 contents in the ZB4 and ZB6 samples are 0.40mol.%and 0.60mol.%,respectively.At the same sintering temperature,the amount of Bi-rich phase in the ZB6-series sample increases,which is conducive to the integration of other metal oxides into the liquid phase.This improves the uniformity of the doping distribution and m

关 键 词：ZNO压敏陶瓷 烧结温度 显微结构 电学性能 C-V特性 

分 类 号：TQ174[化学工程—陶瓷工业]