残余应力及电场对4H-SiC表面压痕硬度的影响  

Effect of Residual Stress and Electric Field on Indentation Hardness of 4H-SiC Surface

作　　者：朱兴杰 章平 左敦稳[1] ZHU Xingjie;ZHANG Ping;ZUO Dunwen(College of Mechanical and Electrical Engineering,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China)

机构地区：[1]南京航空航天大学机电学院,南京211106

出　　处：《人工晶体学报》2025年第4期560-568,共9页Journal of Synthetic Crystals

基　　金：国家自然科学基金(U20A20293)。

摘　　要：本文利用研磨加工得到不同表面残余应力状态的4H-SiC样品,采用激光拉曼光谱仪测量样品表面的残余应力,通过显微硬度计测量无电场和有电场时的样品表面压痕硬度。结果发现:与无残余应力相比,在-1.6~0 GPa的残余压应力状态下,样品表面压痕硬度最大升高了9.5%;对样品通入一定电流后,无残余应力样品的表面压痕硬度可下降约6%,有残余应力样品的表面压痕硬度可下降约13%。对-1.6~1.6 GPa不同残余应力状态的4H-SiC表面压痕硬度进行了有限元模拟分析,发现在0~1.6 GPa的残余拉应力最多可以使晶片表面压痕硬度下降5.8%。研究获得了4H-SiC表面残余应力、电场等条件与其压痕硬度的映射关系,为通过调控残余应力和施加电场降低工件表面硬度提供了理论依据。The 4H-SiC samples with different surface residual stress states were obtained by lapping.The residual stress on the sample surface was measured by a laser Raman spectrometer,and the indentation hardness of the sample surface without and with electric field was measured by a microhardness tester.The results show that,compared to the state with no residual stress,the sample surface indentation hardness increases by up to 9.5%under a residual stress state ranging from-1.6 GPa to 0 GPa.After a certain current is applied to the sample,the indentation hardness of the sample surface with no residual stress can be reduced by about 6%,and the indentation hardness of the sample surface with residual stress can be reduced by about 13%.The surface indentation hardness of 4H-SiC with different residual stress ranging from-1.6 GPa to 1.6 GPa was simulated by finite element analysis.It is found that the residual tensile stress in the range of 0 GPa to 1.6 GPa can reduce the indentation hardness of the wafer surface by up to 5.8%.The mapping relationship between the residual stress,electric field,and the indentation hardness of 4H-SiC surface is obtained,providing a theoretical basis for reducing the surface hardness of the workpiece by regulating the residual stress and applying an electric field.

关 键 词：残余应力 电场 压痕硬度 4H-SIC 有限元模拟 拉曼光谱 

分 类 号：O786[理学—晶体学] TG115.5[金属学及工艺—物理冶金]