溶液法钾溴电解质界面修饰实现高效准二维钙钛矿发光二极管  

Solution-processed potassium bromide electrolyte interface modification for efficient quasi-two-dimensional perovskite light-emitting diodes

作　　者：董贺 王钟艺[1,2,3] 陈宏岩 覃潇 柴源 江海鹏[1,2,3] 华杰 DONG He;WANG Zhong-yi;CHEN Hong-yan;QIN Xiao;CHAI Yuan;JIANG Hai-peng;HUA Jie(College of Information and Technology,Jilin Normal University,Siping 136000,China;Jilin Engineering Research Center of Optoelectronic Materials and Devices,Jilin Normal University,Siping 136000,China;Jilin Province Key Laboratory of Wide Band Gap Semiconductor Material Growth and Device Application,Jilin Normal University,Changchun 130103,China)

机构地区：[1]吉林师范大学信息技术学院,吉林四平136000 [2]吉林师范大学吉林省光电子材料与器件工程研究中心,吉林四平136000 [3]吉林师范大学吉林省宽禁带半导体材料生长与器件应用重点实验室,吉林长春130103

出　　处：《吉林师范大学学报(自然科学版)》2025年第2期48-54,共7页Journal of Jilin Normal University:Natural Science Edition

基　　金：吉林省科技发展计划项目(20220101041JC,20220101125JC);吉林省教育厅科学研究项目(JJKH20240571KJ);国家自然科学基金项目(12273079)。

摘　　要：溶液处理法制备的准二维钙钛矿发光二极管(PeLEDs)具有非常好的商业前景与应用潜力,但界面缺陷和载流子注入不平衡仍然是影响其性能的主要因素.本文采用钾离子电解质KBr对钙钛矿层进行化学掺杂处理,探究钾溴电解质对薄膜结晶、界面特性的调控机制.实验结果表明,KBr的Br-能有效钝化界面缺陷态,梯度K+掺杂诱导了更优的相分布调控,使n=2相含量下降,同时促进高n值相(n≥3)的垂直取向生长,显著改善载流子注入平衡.基于此制备的器件非辐射复合得到抑制,最大亮度达到10350 cd/m^(2),最大外量子效率为9.54%,相比未处理的器件寿命提升近1倍.The solution-processed quasi-two-dimensional perovskite light-emitting diodes(PeLEDs)exhibit significant commercial potential and application prospects.However,interfacial defects and imbalanced carrier injection remain critical factors limiting device performance.This study employs potassium bromide(KBr)electrolyte for chemical doping of the perovskite layer to investigate its regulation mechanism on film crystallization and interfacial characteristics.Experimental results demonstrate that Br-effectively passivate interfacial defect states,while gradient K+doping optimizes phase distribution by suppressing n=2 phase content and promoting vertically oriented growth of high-n phases(n≥3).This structural modulation significantly improves carrier injection balance.The optimized devices exhibit suppressed non-radiative recombination,achieving a maximum luminance of 10350 cd/m^(2) and a peak external quantum efficiency of 9.54%.Furthermore,the operational lifetime demonstrates nearly two-fold enhancement compared to untreated devices.

关 键 词：钙钛矿发光二极管 界面修饰 载流子注入 缺陷钝化 

分 类 号：TN27[电子电信—物理电子学]