掺AgBi系块材的传输临界电流密度及其磁化研究  

STUDY OF TRANSPORT CRITICAL CURRENT DENSITY AND MAGNETIZATION ON Ag-DOPED Bi-BASED BULK MATERIAL

作　　者：王顺喜[1] 王玉贵[1] 袁松柳[1] 周先意[2] 

机构地区：[1]中国科学院等离子体物理研究所,合肥230031 [2]中国科学技术大学近代物理系,合肥230026

出　　处：《低温物理学报》1992年第2期155-159,共5页Low Temperature Physical Letters

摘　　要：本文研究了掺 Ag 对 Bi 系110K 单相块材的传输临界电流密度及其磁滞迥线的影响.通过复交流磁化率,传输临界电流密度以及磁滞回线的测量,我们发现掺 Ag 改善了超导颗粒之间的连接,输运临界电流密度也从原来的340A/cm^2(77K 零场下)上升为1500A/cm^2,且临界电流密度随外加磁场的增加而下降的速率趋于缓慢,磁滞回线的面积(对相同尺寸的样品而言)增加,钉扎力密度也随之得到了提高.我们的结果表明改善晶粒间的连接是改善 Bi 系块材的载流能力的有效途径.The effect of doping Ag on the transport critical current density and magnetization of Bi-based bulk material with pure 100K phase has been investigated in this paper. Through the measurement of complex ac susceptibility, transport Jc and magnetic hystereses, we find that the doping Ag improves the connection between the grains, increases the transport Jc from 340A/cm2 to 1500A/cm2 (at 77K and zero field), makes the hysteretic area become larger for the same size samples and raises the pinning force density. Our results indicate that improving the grain connection in an effective methods for the improvement of current-carrying capacity of Bi-based bulk material.

关 键 词：铋系 超导体 临界电流密度 掺杂 银 

分 类 号：TM262[一般工业技术—材料科学与工程]