电沉积法制备CoS薄膜  

Study on the Electrodeposition of CoS Thin Films

作　　者：杜金会[1] 于振瑞[1] 王旭艳[1] 张加友[1] 贾小东[1] 郭淑华[2] 

机构地区：[1]军事交通学院基础部,天津300161 [2]南开大学化学学院,天津300071

出　　处：《光电子．激光》2002年第12期1215-1218,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目 (5 0 172 0 61)

摘　　要：采用电沉积法在 Sn O2 透明导电玻璃上制备 Co S薄膜 ,电沉积液为 Co Cl2 、Na2 S2 O3和 EDTA的混合溶液。探讨了利用电化学法实现 Co S阴极式共沉积的机理 ,并研究了制备条件对薄膜结构特性和光学特性的影响。制备的薄膜为多晶的γ- Co6 S5结构 ,属于立方晶系 ,直接光学带隙在 1.0 9～ 1.49eCoS thin films were prepared by electrodeposition method from aqueous solution containing CoCl2, EDTA and Na2S2O3 on transparent conducting glass substrates. The mechanism of cathodic electrochemical deposition of CoS films was explored, and the influence of preparation conditions (such as concentration ratio of CoCl2 and Na2S3O3, thermal annealing treatment and deposition current density) on the structural and optical properties of the films was studied. The samples were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical measurements. Both the as-deposited and thermal annealed films are of polycrystalline γ-Co6S5 with cubic structure, and the direct optical band gap of 1.09-1.49 eV was observed, which can be modified by the deposition parameters.

关 键 词：CoS薄膜 电沉积法 X-射线衍射 XRD 扫描电子显微镜 SEM 

分 类 号：TN304.055[电子电信—物理电子学] O4[理学—物理]