铁电半导体碘硫化锑量子点复合材料及其光学性能的研究  

Study of Semiconducting Ferroelectric SbSI Quantum Dot Composites and Its Optical Properties

作　　者：叶辉[1] XuYuhuan MackenzieJD 

机构地区：[1]浙江大学现代光学仪器国家重点实验室,杭州310027 [2]Department of Materials Science and Engineering,University of California

出　　处：《光学学报》2002年第12期1507-1512,共6页Acta Optica Sinica

基　　金：国家自然科学基金(60008005);教育部回国留学人员基金

摘　　要：用溶胶-凝胶法成功地制备了铁电半导体碘硫化锑(SbSI)微晶掺杂有机改性的TiO_2薄膜及块状凝胶。铁电SbSI晶体在C轴具有非常大的介电常数,非常高的电-光系数,较大的光电导系数,同时又是一种本征半导体材料。将SbSI掺杂到非晶态的基质中,通过热处理及气氛保护的方法控制微晶的生长。通过X射线衍射光谱与高分辨透射电子显微镜观察到微晶的存在以及晶体尺寸和分布情况。使用简并的四波混频的方法测得了薄膜样品的三阶非线性极化率,并在块状样品中发现了复合材料中存在的电控双折射效应,测得样品的有效电光系数为2.42×10^(-3)nm/V。Semiconducting ferroelectric antimony sulpho-iodide (SbSI) microcrystallite doped organically modified TiO2 thin film and bulk solids are successfully fabricated by the sol-gel process. Ferroelectric SbSI crystallites have some attractive properties, including high dielectric permittivity, high electro-optical coefficient and high photoconductivity. SbSI is also an intrinsic semiconductor with a relatively narrow energy gap. Glycidoxypropyltrimetroxysilane (GLYMO) modified TiO2 is used as the matrix and SbSI is synthesized in situ by using SbI3, SC(NH2 )2 and H2S gas. The size is controlled by the heat-treatment conditions and is characterized by the XRD and HRTEM measurements. The third order susceptibility of the SbSI quantum dots thin film is measured by the degenerate four-wave mixing method. The electro-optical effect is first measured in the SbSI quantum dot doped bulk solids, and the effective linear E-O coefficient is measured as 2.42?

关 键 词：量子点 复合材料 光学性能 碘硫化锑 铁电半导体 有机改性 电光效应 光学非线性 SBSI 

分 类 号：TN304.9[电子电信—物理电子学] O472[理学—半导体物理]