ZnS:Tm的薄膜电致发光及激发过程  

Thin Film Electroluminesce Device and Excitation Mechanism of ZnS∶TmF_3

作　　者：关亚非[1] 何大伟[1] 成正维[1] 邓朝勇 李少霞 

机构地区：[1]北方交通大学光电子技术研究所信息存储显示与材料开放实验室,北京100044

出　　处：《中国稀土学报》2002年第6期548-552,共5页Journal of the Chinese Society of Rare Earths

基　　金：国家自然基金资助项目(59982001);北京市自然基金资助项目(4012010)

摘　　要：用电子束蒸发的方法制备了传统的双绝缘层的ZnS∶Tm的薄膜电致发光器件。对其电致发光谱进行分析。在光致发光中,Tm离子受到基质ZnS的无辐射能量传递,而在电致发光中,Tm被过热电子碰撞激发而非能量传递。在所研制的电致发光器件中,稀土TmF3掺杂浓度不同,器件的发光性能也不同。在双绝缘层的ZnS∶Tm的薄膜电致发光器件的基础上,改变器件的结构,发现器件的蓝光发射与红外光发射之比增加,并对Tm离子可能的发光机理进行了探讨。The traditional double insulating sandwiched structure(MISIM) ZnS∶TmF3 TFEL device was prepared by Ebeam Evaporation method. The PL excitation mechanism of Tm3+ centers is attributable to the nonradiative energy transfer from the ZnS host to the Tm3+ centers. In contrast with PL, the dominant EL excitation mechanism results from the direct impact excitation of the Tm3+ centers by hot electrons rather than energy transfer. With the varied Tm3+ concentration the intensities of blue emissions are different, but the positions of the peaks is always the same. Another layer of SiO2 was inserted into the luminescent layer. The result shows that ratio of blue emission to red emission of the novel structure devices is improved.

关 键 词：薄膜 稀土 电致发光 电子束蒸发 激发过程 硫化锌 钐 掺杂 电致发光器件 

分 类 号：TN383.1[电子电信—物理电子学] O482[理学—固体物理]