清洗后硅片表面的电子结构  

Electronic Structure of Surface of Cleaned Silicon Wafer

作　　者：曹宝成[1] 于新好[1] 马谨 马洪磊[1] 刘忠立[2] 

机构地区：[1]山东大学光电材料与器件研究所,济南250100 [2]中国科学院半导体研究所,北京100083

出　　处：《固体电子学研究与进展》2002年第4期496-499,共4页Research & Progress of SSE

基　　金：国家自然科学基金资助项目 (批准号 60 1760 3 2 )

摘　　要：介绍了一种含表面活性剂和螯合剂的新型半导体清洗剂和清洗工艺。利用红外吸收谱、X射线光电子谱和原子力显微镜等 ,把它和标准 RCA清洗工艺的清洗效果做了比较。测试结果表明 ,经清洗过的硅片表面主要是由硅、氧和碳三种元素组成 ,它们分别以 Si-O键、C-O键和 Si-C键的形式存在。两种清洗技术都在硅片表面产生氧化硅层 ,在硅片表面都存在有机碳污染 ,但新型半导体清洗工艺产生的有机碳污染少于标准 RCA清洗。在对硅片表面的粗糙化影响方面 ,新型半导体清洗技术清洗明显优于标准This paper reports a new type of semiconductor cleaning detergents and cleaning technique using clean solutions with surfactants and chelates. The results of cleaning using the new type of cleaning technique and RCA standard cleaning technique are compared. The results are obtained by X ray photoelectron spectra? infrared absorption spectra and atomic force microscope. The measurement results show that a thin layer of oxide in the act of cleaning grows in both cases. Organic carbon contaminants are formed in both types of cleaning techniques, but they are significantly less in the new technique than in the RCA standard system. Results show:with respect to roughening effect, the new technique has advantages over the RCA standard technique.

关 键 词：表面清洗 红外吸收谱 X射线光电子谱 原子力显微镜 

分 类 号：TN305.2[电子电信—物理电子学]