用线性电压扫描的电容-时间瞬态测定少子产生寿命  

DETERMINATION OF GENERATION LIFETIME FROM C-t TRANSIENTS UNDER LINEAR VOLTAGE RAMP BIAS

作　　者：张秀淼[1] 

机构地区：[1]杭州大学电子工程系,杭州310018

出　　处：《电子科学学刊》1992年第3期291-294,共4页

基　　金：高纯硅与硅烷国家实验室资助课题

摘　　要：本文建议用耗尽的线性扫描电压扫描MOS电容样品。扫描开始前MOS电容被置于强反型态,以消除表面产生的影响。根据扫描所得的电容-时间瞬态曲线,可确定样品中少于产生寿命。实验表明,对于同一个MOS电容样品,不同电压扫描率下得到的结果有很好的一致性,且与饱和电容法的结果相符合。When a linear voltage ramp applied to the gate of an MOS device theC-t transients are observed. Before the voltage ramp is applied the MOS capacitor is biased into strong inversion in order to eliminate the surface generation. From the C-t transient curve obtained experimentally, the minority carrier generation lifetime in semiconductor can be determined. The experimental results show that for the same sample the lifetimes extracted from the C-t curves obtained under different voltage sweep rates are consistent each other, and they are consistent with the lifetimes extracted fdom saturation capacitance method.

关 键 词：半导体 MOS电容 少子 寿命 

分 类 号：TM53[电气工程—电器]