碳化硅高温钠盐腐蚀的电镜研究  

Electron Microscopy Study On Sodiumm Salt Corrosion of Sic

作　　者：孙荆[1] 胡容明 Nancy J.Tighe 

机构地区：[1]中国科学院上海硅酸盐研究所 [2]上海测试技术研究所 [3]美国显微结构实验室

出　　处：《电子显微学报》1992年第1期33-36,共4页Journal of Chinese Electron Microscopy Society

摘　　要：用扫描电镜和分析电镜研究了碳酸钠对SiC的高温腐蚀,实验表明腐蚀反应首先发生在晶界上的石墨夹杂处。腐蚀的主要结构特徵是针孔腐蚀,针孔一般位于被反应消耗的颗粒及晶界处。电子显微镜研究发现,腐蚀产物除玻璃态硅酸钠外,还有结晶型硅酸钠、二氧化硅及少量的一氧化硅。从实验结果分析了碳酸钠对SiC腐蚀的反应过程。文章还介绍了带有脆性玻璃质为主的腐蚀产物的SiC的电子显微镜试样制备方法。Corrosion reactins on SiC ceramics under molten sodium carbonate have been studied by scanning electron mi-croscope and analytical electron microscope. The experimental results show that the corrosion reactions take place first in the graphite inclusions at triple junctions. The structural characteristic of the corrosion reaction under sodi-um carbonate shows that it is a kind of pin corrosion generally located at the grain boundaries or the particles which have been corroded away. Besides glassy sodium silicate other corrosion products including crystalline sodium silica-te, amorphous and crystallie silica and silicon monoxide have been found under the electron microscopy observation. Reaction steps of sodium carbonate to SiC at high temperature have been deduced according to the experimental re-sults. The method of preparing TEM samples of SiC with glassy corrosion products is described.

关 键 词：碳化硅 碳酸钠 针孔腐蚀 电镜 

分 类 号：TN304.24[电子电信—物理电子学]