场增强α-Si:H光电发射体实验研究  

Experimental Research for Field-Enhanced a-Si:H Photoemitter

作　　者：海宇涵[1] 陈远星[1] 

机构地区：[1]中国科学院电子学研究所,北京100080

出　　处：《电子学报》1992年第2期26-30,共5页Acta Electronica Sinica

基　　金：国家自然科学基金

摘　　要：设计了场增强a-Si:H光电发射体,其结构是S_nO_2—n-p a-Si:H—Al:C_s:O,它具有夹心结构和低功函数表面,并因电荷放大效应而提高了光电产额。初步实验表明,在0.56μm波长,量子效串为2.1％,长波限在0.82μm。文中讨论了实验中存在的问题和提高量子效率的方法。Field-enhanced a-Si:H photoemitter is designed. The device is a SnO2--n-p a-Si:H--Al:Cs:O structure which incorporates a low work-function surface in n-p a-Si:H with charge amplification effect to give an increased photoelectron yield. Experimental demostration of photoemission from a-Si:H in this mode is reported. The photoelectron yield is 2.1% at 0.56μm wavelength and the long-wavelength cutoff is 0.82μm. Problems in the experiment and the method of obtaining high quantum efficiency are discussed.

关 键 词：光电发射体 非晶硅 漂移场 量子 

分 类 号：TN15[电子电信—物理电子学]