77K多晶硅发射区双极型晶体管  

Silicon Bipolar Transistors with Poly Emitter for 77K Operation

作　　者：郑茳[1] 王曙[1] 王燕 吴金 魏同立 童勤义 

机构地区：[1]东南大学微电子中心,南京210018

出　　处：《电子学报》1992年第8期23-28,共6页Acta Electronica Sinica

基　　金：国家自然科学基金

摘　　要：本文介绍了适于77K工作的多晶硅发射区双极型晶体管,给出了在不同工作电流条件下的电流增益的温度模型。结果表明在小电流条件下电流增益随温度下降而下降得更为剧烈,并且讨论了在不同注入情况下,浅能级杂质的陷阱作用对截止频率的影响。The silicon bipolar transistors with poly emitter suitable for 77k operation are presented in this paper. Temperature models of current gain at different current injection le-vels are given. The results indicate that current gain decrease more rapidly as temperature falls at lower current injection level. The trapping effect of the shallow-level dopants on cut-off frequency with various injection condition is discussed.

关 键 词：77K 硅双极晶体管 发射区 

分 类 号：TN325.201[电子电信—物理电子学]