相变光盘介电层ZnS-SiO_2薄膜的性能研究  

Characteristics of ZnS-SiO_2 Film Used as Phase-change Optical Disk Dielectric Layer

作　　者：刘波[1] 阮昊[1] 干福熹[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《无机材料学报》2003年第1期190-194,共5页Journal of Inorganic Materials

基　　金：上海应用物理中心和国家自然科学基金(59832060)

摘　　要：利用AFM、XRD、TEM、紫外可见光谱仪和椭偏仪等多种研究手段研究了ZnS-SiO2薄膜的性能.研究表明,沉积态ZnS-SiO2薄膜为非晶态,表现为层核生长型(Straski-Krastanov型)结构,表面很平滑,其中包含着大小为2-10nm的微小晶粒;ZnS-SiO2薄膜的透过率比较大,消光系数很小,这可以减少入射激光能量的损失;ZnS-SiO2薄膜拥有比较高的折射率,能够对记录层起到很好的保护作用.The characteristics of ZnS-SiO2 dielectric film were studied by using AFM, XRD, TEM, UV/Vis/NIR spectrometer, and spectroscopic ellipsometer methods. It was-indicated that the as-deposited ZnS-SiO2 film is amorphous and has Straski-Krastanov type growth characteristic. The surface of the ZnS-SiO2 film is very smooth. The grain size of the ZnS-SiO2 film is very small, around 2similar to10nm. The transmissivity of the ZnS-SiO2 film is large and the extinction coefficient is very small, which are beneficial to reduce the loss of laser power. The refractive index of the ZnS-SiO2 film is large and the recording layer can be protected very well.

关 键 词：ZnS-SiO2薄膜 性能 介电层 相变光盘 硫化锌 二氧化硅 

分 类 号：TQ594[化学工程—精细化工]