GaAs微条粒子探测器的辐照特性  

Irradiation Characteristic of GaAs Microstrip Particle Detectors

作　　者：邵传芬[1] 朱美华[2] 史常忻[1] 

机构地区：[1]上海交通大学微电子技术研究所,上海200030 [2]上海交通大学物理系,上海200030

出　　处：《Journal of Semiconductors》2003年第2期221-224,共4页半导体学报（英文版）

基　　金：上海市自然科学基金资助项目 (批准号 :99ZD14 0 0 5 )~~

摘　　要：设计了一种能经受高能粒子辐照的 Ga As微条粒子探测器 .该探测器结构采用金属 -半导体 -金属结构 ,其主要几何尺寸是 :微条长度为 17mm ,宽度分别为 2 0、5 0、10 0、2 0 0、30 0μm .该探测器在经受电子、中子、γ射线、X射线等高能粒子辐照后 ,表面金属光亮无损 ,反向击穿电压最高可达 180 V,在反偏电压 80 V时 ,反向暗电流密度低达31n A/mm2 .探测器的最小条宽为 2 0μm.A design of the GaAs microstrip particle detectors which can stand referring and radiating by very high energy particles is described.The structure of the detector is made of metal semiconductor metal.Major geometric dimension of these detector are:the length of the strip is 17mm,and the width of them are of 20,50,100,200,300μm,respectively.As these detectors are radiated by electrons,neutrons,γ ray,X ray of high energy particles,there is no damage to the metallic light on their surfaces,and after referred by these rays,the reverse break down voltage of them can be reached 180V.With reverse bias 80V,the reverse dark current density can be 31nA/mm 2.The smallest strip width of the detectors is 20μm.

关 键 词：GaAs微条粒子探测器 辐照特性 高能粒子辐照 金属-半导体-金属结构 

分 类 号：TN36[电子电信—物理电子学]