脉冲激光气相沉积技术及其在ICF薄膜靶制备中的应用  

Pulse laser vapor deposition technology and its application in fabrication of the ICF filmtargets

作　　者：吴卫东[1] 许华[1] 魏胜[1] 唐永建[1] 陈正豪[1] 

机构地区：[1]中国工程物理研究院激光聚变研究中心,四川绵阳621900

出　　处：《强激光与粒子束》2002年第6期873-876,共4页High Power Laser and Particle Beams

基　　金：国家863惯性约束聚变领域资助课题

摘　　要：　在ICF实验及天体物理的辐射不透明实验中,经常用到多层薄膜靶,激光脉冲气相沉积(PLD)技术是制备多层薄膜靶的较好方法。论述了PLD技术的原理、实验方法和装置的设计,用该方法初步制备了原子级光滑的Cu及Cu Fe薄膜。Cu薄膜的均方根粗糙度为0.2nm,Fe薄膜的均方根粗糙度为0.4nm。The multifilms targets are often used in the studies of ICF experiment and astrophysical opacity. One of the methods producing these targets is the Pulse Laser Deposition (PLD) technology. In this paper, the principle of PLD technology, experiment method, PLD equipment design and the application in fabrication of the ICF filmtargets have been described in detail. Using PLD method, the Cu films and Cu/Fe films were been produced. The average roughness of Cu films is 0.2nm and Cu/Fe films is 0.4nm. Experiments shown that the equipment and the methods were suitable.

关 键 词：脉冲激光气相沉积 ICF 薄膜靶 制备 准分子激光器 

分 类 号：TL639[核科学技术—核技术及应用] TN248[电子电信—物理电子学]