溶胶-凝胶法制备钛酸锶钡薄膜  

Preparation of BST Films by Sol-Gel Method

作　　者：张五星[1] 徐重阳[1] 王长安[1] 赵伯芳[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074

出　　处：《压电与声光》2003年第1期58-60,共3页Piezoelectrics & Acoustooptics

摘　　要：采用溶胶-凝胶(Sol-Gel)法制备钛酸锶钡(BST)薄膜,采用快速热处理(RTA)对薄膜进行烧结。利用DSC、XRD、SEM等技术分析了钛酸锶钡凝胶的热解过程,以及不同溶胶浓度下薄膜的晶粒、晶相、介温特性。实验表明:低浓度的溶胶(0.05mol/L)所制备的薄膜具有较大的介电反常,其晶相具有(111)取向性;而用0.3mol/L的溶胶制备的BST薄膜,晶粒没有(111)取向;用0.05mol/L溶胶制备,使BST薄膜的介温特性得到很大的改善,介温变化率dε(ε·dT)在11°C左右可达6%。Ba08Sr02TiO3 thin films were prepared by SolGel method.The structural and electric properties of BST films were investigated.XRD showed that BST thin films using 005 mol/L solution have (111) orientation and displayed greater dielectric anomaly,while BST thin films from 03 mol/L solution have not.A buffer layer(approx 50 nm) is prepared using 005 mol/L solution. We found that the introduction of buffer layer can increase the differential dielectric constant against temperature in SolGel derived BST films,and explained this by an expanded layer thickness model.The obtained dε/(ε·dT)is up to 6% around 11 °C

关 键 词：薄膜 溶胶-凝胶 钛酸锶钡 快速热处理 介电常数 

分 类 号：TN304[电子电信—物理电子学]