半导体陶瓷电极欧姆接触理论分析  

Theoretical Analysis of Ohm-contact of Semiconductor Ceramic Electrode

作　　者：章登宏[1] 康建虎[1] 

机构地区：[1]江汉石油学院理学院,湖北荆州434023

出　　处：《江汉石油学院学报》2002年第4期110-111,104,共3页Journal of Jianghan Petroleum Institute

摘　　要：针对半导瓷敏感元件 ,应用金属半导体欧姆接触原理 ,分析了半导瓷电极欧姆接触的表面吸附层和能带结构 ;应用金属半导体欧姆接触的伏安特性 ,导出了金属半导瓷欧姆接触的导电机理 。In consideration of semiconductor ceramic sensitive elements, the surface absorption layer and energy band structure of the semiconductor ceramic electrode ohm contact are analyzed by using the principle of metal-semiconductor ohm contact. The conductivity mechanism of metal-semiconductor ceramic contact is derived by using its volt-ampere character, thus it is concluded that the electronic tunneling effect and field emission are the important conductive process of the metal-semiconductor ceramic ohm contact.

关 键 词：半导体陶瓷电极 欧姆接触 金属电极 隧穿效应 场发射 

分 类 号：TN304[电子电信—物理电子学]