5-硝基二氢苊在无显影气相光刻中的光致诱蚀作用的研究——5-硝基二氢苊的光氧化反应  

STUDIES ON THE PHOTOINDUCED ETCHING EFFECT OF 5-NITROACENAPHTHENE IN THE DEVELOPMENT-FREE VAPOR PHOTOLITHOGRAPHY --THE PHOTOOX1DATION OF 5-NITROACENAPHTHEN

作　　者：洪啸吟[1] 刘丹[1] 李钟哲[1] 刘密新[1] 

机构地区：[1]清华大学化学系,北京100084

出　　处：《感光科学与光化学》1992年第4期332-339,共8页Photographic Science and Photochemistry

基　　金：国家自然科学基金;北京市重点自然科学基金资助项目

摘　　要：5-硝基二氢苊的光氧化作用在无显影气相光刻中起着重要作用。我们通过红外,核磁共振、色质联用等手段对其光氧化产物进行了分析,并合成了有关化合物进行对照,确认5-硝基二氢苊的主要光氧化产物是5-硝基苊、5-硝基二氢苊酮、羟基-5-硝基二氢苊。The photooxidation of 5-nitroacenaphthene plays an important role in the development-free vapor photolithography. The major oxidation products have been analysed by means of FT-1R, H-NMR, HPLC-MS. The results were compared with that of anthenic samples synthesized in our laboratory. It was shown that the majorphotooxidation products of 5-nitroacenaphthene are 5-nitroaoenaphthenol, 5-nitroacenaphthenone and 5-nitroacenaphthylene.

关 键 词：显影 气相光刻 光氧化 微电子 

分 类 号：TN405[电子电信—微电子学与固体电子学]