高指数稳定硅表面的低能电子衍射图分析  

Investigation of stable high-index silicon surfaces by means of LEED pattern analysis

作　　者：姜金龙[1] 李文杰[1] 周立[1] 赵汝光[1] 杨威生[1] 

机构地区：[1]北京大学物理系,人工微结构和介观物理国家重点实验室,北京100871

出　　处：《物理学报》2003年第1期156-162,共7页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :1963 40 10 )资助的课题~~

摘　　要：报道了在系统搜寻稳定硅表面的过程中对四个稳定高指数表面Si(1,1,11) ,(1,0 ,8) ,(2 ,1,2 )和 (15 ,1,17)的低能电子衍射 (LEED)图进行的分析和结果 .这些表面经充分退火后都能给出属于各自表面的LEED图 ,而不是小面化的 ,说明它们都是稳定的 .从它们的LEED斑点强度分布特征不仅可以推断 (15 ,1,17)是主稳定表面 ,而 (1,1,11) ,(1,0 ,8)和 (2 ,1,2 )则是副稳定表面 ,还能知道这些副稳定表面的原胞结构特征 ,甚至许多重要细节 .从原胞结构特征来看 ,这些副稳定表面有可能用作生长周期量子线的模板 .In the course of a systematic search for stable silicon surfaces, we have studied four stable high-index silicon surfaces, i e., Si(1, 1, 11), (108), (212), and (15, 1, 17), by analyzing their low-energy electron diffraction (LEED) patterns. The results show not only that all these surfaces are stable but also that Si(15, 1, 17) is a major stable surface, whereas the rest three are minor stable surfaces, meaning that their unit cells consist of a nanometer facet of a major stable surface along with a double height step. In view of the periodic facet-step morphology of these minor stable surfaces, we suggest that these surfaces have the potential to be used as templates for growth of periodic nanowires of some suitable materials.

关 键 词：低能电子衍射图 硅 高指数表面 近邻面 原胞小面化 LEED 稳定表面 纳米结构 

分 类 号：O472.1[理学—半导体物理]