硅纳米线的固-液-固热生长及升温特性研究  

HEATING PROCESS OF SOLID-LIQUID-SOLID (SLS) GROWTH OF SILICON NANOWIRES

作　　者：邢英杰[1] 奚中和[1] 俞大鹏[2] 杭青岭[2] 严涵斐[2] 冯孙齐[2] 薛增泉[1] 

机构地区：[1]北京大学电子学系,北京100871 [2]北京大学物理系,北京100871

出　　处：《电子与信息学报》2003年第2期259-262,共4页Journal of Electronics & Information Technology

基　　金：国家自然科学基金(No.60071015)

摘　　要：该文报道一种直接在硅片上热生长硅纳米线的新方法.与传统的VLS生长机制不同,该方法在生长硅纳米线的过程中没有引入任何气态或液态硅源,是一种全新的固-液-固(SLS)生长机制.实验中使用了Ni,Au等金属作为催化剂,由Ar,H2等作为载流气体.系统压强为2 5×104Pa,生长温度为950-1000℃.生长出的硅纳米线表面光滑,呈纯非舳态,直径为10-40nm,长度可达数十微米.升温特性对硅纳米线SLS热生长起重要作用.研究了各项实验参数(包括气氛压强,加热温度及加热时间等)对硅纳米线生长的影响.Large-scale amorphous Si nanowires are prepared by heating the Si substrate at 950-1000℃ under the ambient of Ar/H2 (2.5×10~4Pa) using Ni (or Au) catalyst. The nanowires have a length up to several tens micron and a diameter of 10-40 nm. A solid-liquid-solid (SLS) mechanism is found controlling the nanowire growth. The heating process during SLS growth is studied detailedly using SEM and TEM. Effects of several processing variables such as the pressure, temperature and heating time are investigated individually. The effect of three heating steps is also discussed.

关 键 词：硅纳米线 SLS生长机制 升温特性 一维纳米材料 制备方法 

分 类 号：TN304.12[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]