Characterization of Oxide Charge During Hot-Carrier Degradation of Ultrathin Gate pMOSFETs--Investigated by Charge Pumping Technique  

热载流子应力下超薄栅p MOS器件氧化层陷阱电荷的表征(英文)

作　　者：杨国勇[1] 王金延[1] 霍宗亮[1] 毛凌锋[1] 谭长华[1] 许铭真[1] 

机构地区：[1]北京大学微电子学研究所,北京100871

出　　处：《Journal of Semiconductors》2003年第3期238-244,共7页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目 (No.2 0 0 0 0 36 5 0 3)~~

摘　　要：The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is observed for pMOSFETs with different channel lengths under hot-carrier stress.Thus,the relationships of oxide charge generation,including electron trapping and hole trapping effects,with different stress voltages and channel lengths are analyzed.It is also found that there is a two-step process in the generation of oxide charge for pMOSFETs.For a short stress time,electron trapping is predominant,whereas for a long stress time,hole trapping dominates the generation of oxide charge.利用电荷泵技术研究了 4nmpMOSFET的热载流子应力下氧化层陷阱电荷的产生行为 .首先 ,对于不同沟道长度下的热载流子退化 ,通过直接的实验证据 ,发现空穴陷阱俘获特性与应力时间呈对数关系 .然后对不同应力电压、不同沟道长度下氧化层陷阱电荷 (包括空穴和电子陷阱俘获 )的产生做了进一步的分析 .发现对于 pMOSFET的热载流子退化 ,氧化层陷阱电荷产生分两步过程 :在较短的应力初期 ,电子陷阱俘获是主要机制 ;而随着应力时间增加 ,空穴陷阱俘获作用逐渐显著 ,最后主导了氧化层陷阱电荷的产生 .

关 键 词：MOS structure oxid trap hot-carrier degradation 

分 类 号：TN386.1[电子电信—物理电子学]