GaAs/GaAlAs激光放大器的双稳态特性研究  

Research about the Bistability in GaAs/GaAlAs Fabry-Perot Cavity Type Semiconductor Laser Amplifier

作　　者：江剑平[1] 董杰[1] 黄小康[1] 李艳和[1] 

机构地区：[1]清华大学无线电系

出　　处：《激光与红外》1989年第4期20-22,共3页Laser & Infrared

摘　　要：我们实验研究了Gn_xAl_(1-x)As法珀型激光放大器在失谐状态下的双穗态特性并给出了理论分析。双稳态特性是由入射光的折射率改变所致。实验结果与理论分析结果基本一致。最小临界触发功率约为30μW。The experimental observation and the theoretical analysis of the hysteresis characteristics in GaAlAs Fabry-Perot cavity type laser amplifier are reported. The bistability results from the refractive index change due to light injection. The experimental results are basically consistent with the teoretical analysis. The minimum critical triggering input power is about 30μW.

关 键 词：激光放大器 双稳态 GAAS/GAALAS 

分 类 号：TN722.32[电子电信—电路与系统]