热丝CVD法生长纳米金刚石薄膜的研究  

Synthesis of Nanocrystalline Diamond Films Deposited by Hot Filament CVD

作　　者：张志明[1] 莘海维[1] 戴永兵[1] 孙方宏[1] 汪涛[1] 沈荷生[1] 

机构地区：[1]上海交通大学微电子研究所,上海200030

出　　处：《微细加工技术》2003年第1期27-33,共7页Microfabrication Technology

基　　金：国家863计划新材料领域纳米专项资助项目(2002AA302613);上海市科技发展基金纳米专项资助项目(0159nm033);上海交通大学教育部薄膜与微细技术重点实验室资助项目

摘　　要：系统地研究了热丝CVD法中反应气体压力对沉积产物金刚石薄膜的形貌和拉曼谱图的影响,提出了热丝CVD生长纳米金刚石薄膜的新工艺,并在50mm硅片上沉积得到高质量的多晶纳米金刚石薄膜。高分辨透射电镜分析表明,薄膜的晶粒尺寸约为10nm,〈111〉晶面间距为0.2086nm,与标准值0.2059nm很接近,晶粒周围由非晶结构包围。紫外激光拉曼光谱有尖锐的金刚石峰和明显的石墨峰。Effect of the reactive gases pressure on morphology and Raman spectroscopy of diamond films deposited by hot filament chemical vapor deposition (HFCVD) was systematically investigated.A new process was proposed to deposit the nanocrystalline diamond films using HFCVD technique. The results show that the high quality nanocrystalline diamond film can be deposited on a 50mm diameter Si substrate by reducing the reactive gases pressure. The grain size was observed to be approximately 10nm by HRTEM. The lattice spacing d111estimated from{111}planes is 0.2086nm,which is close to the standard value 0.205 9nm. The grain was surrounded by the sp2 carbon structure. Both the sharp diamond peak and obvious graphite peak were revealed by ultraviolet(UV)Raman spectroscopy.

关 键 词：纳米金刚石 薄膜 热丝CVD 

分 类 号：TN304.055[电子电信—物理电子学]