多孔硅M/PS结的研究  

The Study of the Porous Silicon M/PS Nodes

作　　者：徐伟弘[1] 许国良[2] 王发强[2] 

机构地区：[1]东南大学电子工程系,南京210096 [2]南京大学光通信工程研究中心,南京210093

出　　处：《光电子技术》2003年第1期24-26,共3页Optoelectronic Technology

摘　　要：对不同金属形成的 M/PS/Si/Al结构样品进行测试 ,发现其 I- V特性曲线具有相似的形状 ,区别仅在于高偏压下的串连电阻不同 ,通过进行表面态对 M/PS影响的分析可知The samples with the structure of M/PS/Si/Al deposited with different metal films were measured. The results indicated that the I V characteristics of all the samples had the similar shape. The only difference among the samples is that their series resistances were different. With the analysis of the effect of surface state on the M/PS, it is concluded that M/PS possess the ohm characteristics.

关 键 词：多孔硅 I-V特性 

分 类 号：O472.8[理学—半导体物理]