硅基二氧化硅厚膜材料的快速生长  

The Quick Deposition of Silica Thick Films on Silicon

作　　者：吴远大[1] 张乐天[1] 邢华[1] 李爱武[1] 郑伟[1] 刘国范[1] 张玉书[1] 

机构地区：[1]吉林大学电子系光电子国家重点实验室,长春市130023

出　　处：《光子学报》2003年第2期195-198,共4页Acta Photonica Sinica

基　　金：国家 973项目资助 (G2 0 0 0 0 36 6 0 2 )

摘　　要：采用火焰水解法在Si片上快速淀积SiO2 厚膜材料 ,材料膜厚达到 4 0 μm以上 ,生长速率达8μm/min .然后将该材料分别在真空中 /空气气氛中高温致密化处理 ,获得了各种形态的二氧化硅厚膜材料 ,包括平整度好、光滑透明的玻璃态SiO2 厚膜材料 .并利用XRD、电子显微镜等仪器对SiO2膜的表面和膜厚进行了测试分析 .The SiO 2 thick films is deposited on silicon substrate by Flame Hydrolysis Deposition (FHD). The thickness of the films is up to 40 μm , and the deposition speed is as high as 8 μm per minute. Then, the films is consolidated in electric furnaces both in vacuum and gasoline situation, and several kinds of states of silica are obtained, including of uniform and transparent silica glass. Finally, the silica films is analyzed by meanings of XRD, microscope, etc.

关 键 词：火焰水解法(FHD) 厚膜 玻璃态 致密化 

分 类 号：TN252[电子电信—物理电子学]