新颖的IGBT等效电路模型及参数提取和验证  

A Novel IGBT Subcircuit Model with Parameters Extraction and Comparison with Measurements

作　　者：袁寿财[1] 朱长纯[1] 刘君华[1] 

机构地区：[1]西安交通大学电子与信息学院,西安710049

出　　处：《电子器件》2003年第1期5-9,共5页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助:(NO .60 0 360 1 6;50 0 770 1 6);博士点基金资助(NO .CETD0 0 - 1 0 )

摘　　要：以Spice电路模拟的IGBT(绝缘栅双极晶体管 )等效电路优化模型 ,用压控电阻 (VCR)等效IGBT的宽基区电导调制效应取得了很好的效果。基于器件的参数实测值 ,通过物理方程式 ,精确推导出器件的主要原始设计参数。用Spice的LEVEL 8模型 ,以确保模型的精确性和收敛性 。A subcircuit based model for the Insulated Gate Bipolar Transistor(IGBT) is proposed and optimized.The IGBT wide base conductivity modulated resistor is effectively equivalent by using a Voltage Controlled Resistor(VCR). Based on analytical equation describing the semiconductor physics, the model parameters are extracted accurately via measured data without devices destruction. Employing the MOS IEVEL 8 spice model, the proposed IGBT subcircuit model gives more simulation accuracy and easy convergence.The simulation results are verified by comparison with measurement results.

关 键 词：IGBT VDMOS SPICE 模型 模拟 等效电路 

分 类 号：TN32[电子电信—物理电子学]